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TOSHIBA
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Part No. |
TPC8228-H
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OCR Text |
... = 2.6 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 38 m ? (typ.) (5) low leakage current: i dss = 10 a (max) (v ds = 60 v) (6) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3. packagin... |
Description |
Power MOSFET (N-ch dual)
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File Size |
255.40K /
9 Page |
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it Online |
Download Datasheet
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TOSHIBA
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Part No. |
TK100A08N1
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OCR Text |
...features features (1) low drain-source on-resistance: r ds(on) = 2.6 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 80 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. ... |
Description |
Power MOSFET (N-ch single 60V<VDSS≤150V)
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File Size |
234.38K /
9 Page |
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it Online |
Download Datasheet
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TOSHIBA
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Part No. |
TPH7R506NH
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OCR Text |
...w = 14 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 6.1 m ? (typ.) (v gs = 10 v) (5) low leakage current: i dss = 10 a (max) (v ds = 60 v) (6) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.3 ma) 3. 3. ... |
Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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File Size |
235.24K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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