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CEL[California Eastern Labs]
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| Part No. |
NE681M13-T3-A NE681M13 NE681M13-A
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| OCR Text |
silicon TRANSISTOR
NE681M13
FEATURES
* NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.5...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NECs NP silicon TRANSISTOR
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| File Size |
122.32K /
3 Page |
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it Online |
Download Datasheet
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CEL[California Eastern Labs]
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| Part No. |
NE685M03-T1-A NE685M03 NE685M03-A
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| OCR Text |
silicon TRANSISTOR NE685M03
FEATURES
* NEW M03 PACKAGE: * Smallest transistor outline package available * Low profile/0.59 mm package he...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NPN silicon TRANSISTOR
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| File Size |
163.59K /
4 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NE685M33-T3-A NE685M33 NE685M33-A
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| OCR Text |
silicon TRANSISTOR NE685M33
FEATURES
* * * LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz INSERTION POWER GAIN: |S21e|2 =...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NECs NPN silicon TRANSISTOR
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| File Size |
277.23K /
6 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NE687M03-T1-A NE687M03 NE687M03-A
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| OCR Text |
silicon TRANSISTOR
FEATURES
* NEW M03 PACKAGE: * Smallest transistor outline package available * Low profile/0.59 mm package height * Flat...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NECs NPN silicon TRANSISTOR
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| File Size |
239.84K /
4 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NE687M33-T3-A NE687M33 NE687M33-A
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| OCR Text |
silicon TRANSISTOR NE687M33
FEATURES
* * LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NECs NPN silicon TRANSISTOR
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| File Size |
267.51K /
6 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NE68939-T1-A NE68939
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| OCR Text |
silicon EPITAXIAL TRANSISTOR
FEATURES
* OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 ...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NPN silicon EPITAXIAL TRANSISTOR
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| File Size |
106.14K /
3 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NE856M03-T1-A NE856M03 NE856M03-A
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| OCR Text |
silicon TRANSISTOR NE856M03
FEATURES
* NEW M03 PACKAGE: * Smallest transistor outline package available * Low profile/0.59 mm package heig...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NPN silicon TRANSISTOR
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| File Size |
102.44K /
4 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NE97833-T1B-A NE97833
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| OCR Text |
silicon HIGH FREQUENCY TRANSISTOR
FEATURES
* HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP * HIGH SPEED SWITCHING CHARACTERISTICS * NPN CO...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
PNP silicon HIGH FREQUENCY TRANSISTOR
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| File Size |
143.85K /
6 Page |
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it Online |
Download Datasheet |
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CALMIRCO[California Micro Devices Corp]
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| Part No. |
NESG2021M16-T3-A NESG2021M16 NESG2021M16-T3
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| OCR Text |
...ricated using NECs high voltage silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise am...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
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| File Size |
178.77K /
3 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NESG2031M16-T3-A NESG2031M16
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| OCR Text |
...ricated using NECs high voltage silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise am...chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 10... |
| Description |
HIGH FREQUENCY TRANSISTOR
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| File Size |
179.03K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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