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For sdm. Found Datasheets File :: 1760 Search Time::1.531ms
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				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB36NF02L
OCR Text	...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =36 A V GS = 0 50 80...
Description	N-CHANNEL 20V - 0.016 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
File Size	45.05K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB36NF03L
OCR Text	...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =36 A V GS = 0 38 30...
Description	N-CHANNEL 30V - 0.015 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
File Size	44.82K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STB3NA60-1 4890
OCR Text	...RCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.9 A V GS = 0 46...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	114.20K / 9 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STB3NA80 4229 STB3NA80T4
OCR Text	...RCE DRAIN DIODE Symbo l I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3.1 A VGS = 0 700 ...
Description	Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	126.03K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB3NB60 5982
OCR Text	...RCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3.3 A V GS = 0 500...
Description	From old datasheet system N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
File Size	90.97K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics 意法半导
Part No.	STB3NC60 STB3NC60T4 STB3NC60-1
OCR Text	...RCE DRAIN DIODE Symbo l I SD I SDM (*) V SD () t rr Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A V GS = 0 420 1....
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 3A I(D) \| TO-262AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 3A I(D) \| TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
File Size	93.20K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB50NE08
OCR Text	...RCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 50 A V GS = 0 100 ...
Description	N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
File Size	94.20K / 8 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STB50NE10L 6036
OCR Text	...URCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 50 A I SD = 50 A V...
Description	N-Channel 100V-0.020Ω-50A-D2PAK STripFETTM Power MOSFET(N沟道功率MOSFET) N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET From old datasheet system
File Size	49.92K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB50NE10
OCR Text	...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 50 A V GS = 0 155 ...
Description	N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET
File Size	85.17K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
Part No.	STB55NE06L 5722
OCR Text	...URCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 55 A I SD = 55 A V...
Description	N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N娌??澧?己妯″????MOSFET) N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
File Size	54.22K / 5 Page	View it Online	Download Datasheet

For sdm. Found Datasheets File :: 1760 Search Time::1.531ms
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