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IRF[International Rectifier]
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Part No. |
IRF634NSPBF IRF634NLPBF IRF634NPBF
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OCR Text |
... 16 --- ID = 4.8A ns --- 28 --- RG = 1.3 --- 15 --- VGS = 10V, See Fig. 10 D Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- ...8.0 showing the A G integral reverse --- --- 32 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 4... |
Description |
HEXFET Power MOSFET
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File Size |
219.70K /
11 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF630N_04 IRF630N IRF630NL IRF630NS IRF630N04
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OCR Text |
...VDD = 100V --- ID = 5.4A ns --- RG = 13 --- RD = 18 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die conta...8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ... |
Description |
HEXFET Power MOSFET
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File Size |
237.67K /
11 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF6215S IRF6215L
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OCR Text |
...- VDD = -75V --- ID = -6.6A --- RG = 6.8 --- RD = 12, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 860 --- VGS = 0V 220 --- pF VDS = -25V 130 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
... |
Description |
HEXFET Power MOSFET
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File Size |
168.85K /
10 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF7473PBF IRF7473PBF-15
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OCR Text |
... VDD = 50V --- ID = 4.1A ns --- RG = 6.0 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- ...8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V
1000
100
I D , Drain-to-Source Current (A)
ID, Drain-to-... |
Description |
Telecom and Data-Com 24 and 48V input DC-DC converters HEXFET Power MOSFET
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File Size |
123.80K /
8 Page |
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it Online |
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Optoway Technology Inc. Optoway Technology, Inc.
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Part No. |
Nu-73D74D-PG Nu-73D74D-RG
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OCR Text |
RG
Nu-73D74D-PG
1
*****************************************************************************************************************...8 Vcc 20 20 30
2 2 Laser DC-bias Disabled Laser DC-bias Ensabled
1. Output power is power coup... |
Description |
Open air current sense resistor: Through hole, 1W@85°C, .050Ω, 5%, ±20ppm/°C, lead-free 3.3V, 1.25 Gbps 1310 nm Burst-Mode TX / 1.25 Gbps 1490 nm Continuous RX 2X5 SFF Package, GE-PON 1000BASE-PX10-u ONu Transceiver 3.3.25 Gbps310纳米突发模式德克萨斯 1.25 Gbps490纳米连续收发2X5 SFF封装,GE - PON的个1000BASE - PX10 - ü的ONu收发 Open air current sense resistor: Through hole, 1W@85°C, .050Ω, 5%, ±20ppm/°C, lead-free 3.3.25 Gbps310纳米突发模式德克萨斯 1.25 Gbps490纳米连续收发2X5 SFF封装,GE - PON的个1000BASE - PX10 - ü的ONu收发
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File Size |
154.30K /
5 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
IRF614B IRF614BFP001
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OCR Text |
... 5)
VDD = 125 V, ID = 2.8 A, RG = 25
(Note 4, 5)
--------
6.0 30 25 30 8.1 1.4 3.5
22 70 60 70 10.5 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous D... |
Description |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A 250V N-Channel MOSFET
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File Size |
852.78K /
10 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF5YZ48CM IRF5YZ48CM-15
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OCR Text |
... VDD = 28V, ID = 18A, VGS =10V, RG = 5.1
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-So...8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5... |
Description |
Avalanche Energy Ratings POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*) 55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
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File Size |
103.91K /
7 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF5Y31N20
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OCR Text |
...DD = 100V, ID = 18A, VGS = 10V, RG = 2.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-So...8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
100
VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
I... |
Description |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
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File Size |
97.48K /
7 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF530NS IRF530L IRF530NL IRF530NSTRL IRF530NSTRR IRF530NLPBF
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OCR Text |
... VDD = 50V --- ID = 9.0A ns --- RG = 12 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-... |
Description |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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File Size |
602.97K /
10 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF3709ZS IRF3709Z IRF3709ZL
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OCR Text |
...SS tp
VDS L
50
DRIVER
RG
20V
D.u.T
IAS
+ V - DD
0
A
25
50
75
100
125
150
175
I AS
tp
0.0...8
www.irf.com
IRF3709Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inc... |
Description |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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File Size |
332.34K /
12 Page |
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it Online |
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Price and Availability
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