rg-188 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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rg-188 Datasheet PDF File

For rg-188 Found Datasheets File :: 529 Search Time::1.11ms
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				International Rectifier
Part No.	IRFZ48S IRFZ48L
OCR Text	... VDD = 30V --- I D = 72A ns --- RG = 9.1 --- RD = 0.34, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET? Power MOSFET
File Size	315.98K / 10 Page	View it Online	Download Datasheet

				RADIALL S A
Part No.	R197.110.G00
OCR Text	...ge 4 and 5 recommended cable(s) rg 174 kx 22a rg 316 rg 188 kx 3b cable retention - pull off 120 nmini - torque n.cm tooling part number description hexagon r282.235.003 crimping dies m22520/5- 03 r282.271.000 crimping tool 0.72/3.25 r282.2...
Description	CABLE TERMINATED, RF CONNECTOR, CRIMP, PLUG
File Size	272.16K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3315L
OCR Text	...- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET Power MOSFET
File Size	201.56K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	CPV364M4F
OCR Text	... 15A, VCC = 480V 330 VGE = 15V, RG = 10 240 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 1.8 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 15A, VCC = 480V --- VGE = 15V, RG = 10 --- Energy l...
Description	IGBT SIP MODULE
File Size	242.68K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK0602DPN-E0 RJK0602DPN-E0-T2 RJK0602DPN-E0-15
OCR Text	... at l = 100 ? h , tch = 25 ?c, rg ? 50 ? , 3. tc = 25 ?c r07ds0653ej0200 rev.2.00 aug 24, 2012 rjk0602dpn-e0 preliminary r07ds0653ej0200 rev.2.00 page 2 of 6 aug 24, 2012 electrical characteristics (ta = 25c) item ...
Description	N-Channel MOS FET 60 V, 100 A, 3.9 m. N-Channel MOS FET 60 V, 100 A, 3.9 m?
File Size	78.82K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STS10DN3LH5
OCR Text	...nal level = 20 mV open drain RG Gate input resistance - 2.5 - 4/13 Doc ID 15624 Rev 1 www.DataSheet4U.com ST...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description	Power MOSFETs
File Size	791.31K / 13 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	CPV364M4KPBF
OCR Text	...13A, V CC = 480V 140 VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ and diode reverse recovery 1.1 See Fig. 9,10, 18 -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 10 , V CPK < 500V -- TJ = 150C, See Fig. 11,18 -- IC = 13A, V CC = 480...
Description	IGBT SIP MODULE
File Size	293.22K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3205S IRF3205L
OCR Text	...- VDD = 28V --- ID = 62A ns --- RG = 4.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	160.23K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STS1C1S250
OCR Text	... DYNAMIC Symbol Ciss Coss Crss Rg Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance f=1 MHz...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description	N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
File Size	446.00K / 10 Page	View it Online	Download Datasheet

				Omnirel NEC, Corp.
Part No.	2N6770 JANTX2N6764
OCR Text	...See note 4 VD D = 5 V ID = 38A, RG =2.35 0, See note 4 - 0.055 0.065 40 . 25 250 100 -100 125 22 65 35 190 170 130 V A nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltag...
Description	500V, 12A, N-Channel, Enhancement Mode Power MOSFET(500V, 12A,N沟道，增强模式功率MOS场效应管) 100V, 38A, N-Channel, Enhancement Mode Power MOSFET(100V, 38A,N沟道，增强模式MOS功率场效应管) 100V的，38A条，N沟道，增强模式功率MOSFET00V的，38A条，沟道，增强模式马鞍山功率场效应管
File Size	62.43K / 5 Page	View it Online	Download Datasheet

For rg-188 Found Datasheets File :: 529 Search Time::1.11ms
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