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Alpha Industries Inc
ALPHA[Alpha Industries]
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| Part No. |
AFM04P2-000
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| OCR Text |
...T CGSO CGDO VBI IS N IBO NR VBD RG RD RS LG LD LS CDS RDSD CDSD CGE CDE Transconductance Coefficient Pinch-off voltage Mobility degradation fitting parameter Slope parameter of pinch-off voltage Power law parameter Subthreshold slope gate p... |
| Description |
Ka Band Power GaAs MESFET Chip
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| File Size |
40.99K /
3 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT31N80JC3
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| OCR Text |
... 10V VDD = 400V ID = 31A @ 125C RG = 2.5 6 INDuCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 31A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD...141
TC ( C)
0.226
30 5V
ZEXT
20
ZEXT are the external thermal impedances: Case to si... |
| Description |
Super Junction MOSFET
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| File Size |
248.14K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M65JFLL_03 APT50M65JFLL APT50M65JFLL03
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| OCR Text |
...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...141 40 70 12 28 29 30 1035 845 1556 1013
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") C... |
| Description |
POWER MOS 7 R FREDFET
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| File Size |
99.79K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M65JLL_03 APT50M65JLL APT50M65JLL03
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| OCR Text |
...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...141 40 70 12 28 29 30 1035 845 1556 1013 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller") Cha... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
99.40K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M65LLL APT50M65B2LL APT50M65B2LL_04 APT50M65B2LL04
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| OCR Text |
...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...141 40 70 12 28 29 30 1035 845 1556 1013 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Ch... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
97.88K /
5 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM150E3u-24H
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| OCR Text |
..., IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1 , Resistive Load Switching Operation IE = 150A, diE/dt = -300A/s IE = 150A, diE/dt = -300A/s IF = 1...141
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150E3u-... |
| Description |
Chopper IGBTMOD 150 Amperes/1200 Volts
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| File Size |
58.72K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04
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| OCR Text |
...ITIONS
VDS = 10 (V) ID = 8 (A) RG=25 (ohm)
1.4
ABSOLuTE MAXIMuM RATINGS
Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg Parameter Gate to...141 108 S22 Angle(deg) -29 -56 -94 -142 -177 149 122 93 63
S11 Magn. Angle(deg) 0.51 165 0.55 0.5... |
| Description |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
226.59K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2527A
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| OCR Text |
...IONS
VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm)
)#6' 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 88 175 -65 ...141
MITSuBISHI ELECTRIC
June-'04
P W RA D DE F I N YPAE ( ) O E D E FI E C . . .% C
MITS... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
248.54K /
3 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP15N38CL
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| OCR Text |
...( (VCC = 300 V, IC = 6.5 A, , , RG = 1.0 k, L = 300 mH) ( (VCC = 10 V, IC = 6.5 A, , , RG = 1.0 k, RL = 1.0 ) td(off) tf td(on) tr QT Q1 Q2 ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
4
MGP15N38CL/D Motorola ... |
| Description |
Internally Clamped N-Channel IGBT
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| File Size |
68.18K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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