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FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
FS6S1265RBSYDTU
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OCR Text |
...ce charge qgs - 8 - gate-drain (miller) charge qgd - 22 - fs6s1265rb drain-source breakdown voltage bv dss v gs = 0v, i d = 50 a 650 - - v zero gate voltage drain current i dss v ds =max, rating, v gs = 0v - - 200 a v ds = 0.8max, rati... |
Description |
48 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PZFM5
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File Size |
249.21K /
15 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
FDD10AN06A0NL
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OCR Text |
... 28nc (typ.), v gs = 10v low miller charge low qrr body diode uis capability (single pulse and repetitive pulse) formerly developmental type 82560 applications motor / body load control abs systems powertrain management injec... |
Description |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 60V, 50A, 0.0105 Ohms @ VGS = 10V, TO-252/DPAK Package
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File Size |
242.66K /
11 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP
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Part No. |
APT8020B2FLLG
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OCR Text |
...eased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package ? fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhanceme... |
Description |
38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
245.11K /
5 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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Part No. |
WFSA6503
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OCR Text |
...rge q gs -1.82 - gate-to-drain ?miller? charge q gd -3.2 - diode forward voltage v sd i s =1a, v gs =0v - 0.76 1.3 v
steady, keep you advance wfsa6503 3 /10 n-channel typical characteristics at t a =25 0 c
steady, keep you advance wfsa6... |
Description |
N- Channel and P-Channel Silicon MOSFETs
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File Size |
420.32K /
9 Page |
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it Online |
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Price and Availability
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