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  low vcesat igbt with diode hig Datasheet PDF File

For low vcesat igbt with diode hig Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    MGP4N60ED_D MGP4N60ED ON1873 ON1872

ON Semiconductor
Part No. MGP4N60ED_D MGP4N60ED ON1873 ON1872
Description igbt & diode IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS
Insulated Gate Bipolar Transistor with Anti-Parallel diode
From old datasheet system

File Size 142.07K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MGY20N120D_D ON1930 MGY20N120D ON1929
Description igbt & diode IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor with Anti-Parallel diode

File Size 167.83K  /  6 Page

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    SGH40N60UFD SGH40N60 SGH40N60UFDTU

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. SGH40N60UFD SGH40N60 SGH40N60UFDTU
Description    Ultra-Fast igbt
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness
Discrete, high Performance igbt with diode

File Size 600.21K  /  8 Page

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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
Description Insulated Gate Bipolar Transistor withr Anti-Parallel diode
igbt & diode IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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    NXP Semiconductors N.V.
Part No. PBSS303ND PBSS303ND115
Description 60 V, 3 A NPN low vcesat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low vcesat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 150.59K  /  16 Page

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    NXP Semiconductors N.V.
Philips
Part No. PBSS3540M PBSS3540M315
Description 40 V, 0.5 A PNP low vcesat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low vcesat (BISS) transistor

File Size 65.41K  /  9 Page

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    PBSS2540M PBSS2540M315

NXP Semiconductors N.V.
Philips Semiconductors
Part No. PBSS2540M PBSS2540M315
Description 40 V, 0.5 A NPN low vcesat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low vcesat (BISS) transistor

File Size 62.49K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SGR2N60UFD SGR2N60UFDTM SGR2N60UFDTF
Description    Ultra-Fast igbt
Discrete, high Performance igbt with diode

File Size 537.33K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4PH40UD2-E IRG4PH40UD2-EPBF
Description 41 A, 1200 V, N-CHANNEL igbt, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR with ULTRAFAST SOFT RECOVERY diode
1200V UltraFast 5-40 kHz Copack igbt in a TO-247AD package

File Size 247.90K  /  10 Page

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    SIEMENS AG
Part No. SKB15N60
Description Fast S-igbt in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-igbt) 快速的S - igbt的不扩散核武器条约与软,恢复快反平行快恢复二极管(不扩散技术中的快速第S - igbt技术)

File Size 302.43K  /  14 Page

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For low vcesat igbt with diode hig Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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