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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). U Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . R Starting TJ = 25C, L = 0.13...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF[International Rectifier]
Part No. IRHYS67130CM IRHYS63130CM
OCR Text ...Temperature Weight * Current is limited by package For footnotes refer to the last page 20* 19 80 75 0.6 20 107 20 7.5 5.5 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm from case for 1...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

File Size 180.77K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHYS597Z30CM IRHYS593Z30CM
OCR Text ...Temperature Weight * Current is limited by package For footnotes refer to the last page -20* -18 -80 75 0.6 20 200 -20 7.5 -1.84 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from case for 1...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

File Size 194.60K  /  8 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.21mH Cal...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 0.13mH, VGS = 10V RG = 25, IAS = 100A. (See Figure 12) ISD 100A, di/dt 150A/s, VDD V(BR)DSS, TJ 200C Pulse width 400s; duty ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHYB597Z30CM IRHYB67130CM IRHYB593Z30CM IRHYB63130CM
OCR Text ...Temperature Weight * Current is limited by package For footnotes refer to the last page 20* 19 80 75 0.6 20 107 20 7.5 5.5 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm from case for 1...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

File Size 170.63K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHY57133CMSE JANSR2N7488T3 IRHY57133CMSE-15
OCR Text ...Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 12 72 75 0.6 20 80 18 7.5 8.0 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from case for 10sec) 4...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

File Size 172.08K  /  8 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...ated * SOA is Power Dissipation limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250V DC Rated - 120V AC Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surf...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRHSLNA58064 IRHSLNA53064 IRHSLNA54064 IRHSLNA57064
OCR Text ...rface Temp. Weight * Current is limited by package For footnotes refer to the last page Pre-Irradiation Units 75* 75* 300 250 2.0 20 370 75 25 75* 75* -55 to 150 300 (for 5s) 3.3 (Typical) A W W/C V mJ A mJ A C g www.irf.com...
Description 60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 75A条(丁)|贴片

File Size 111.15K  /  9 Page

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