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  jan.24.02 Datasheet PDF File

For jan.24.02 Found Datasheets File :: 1496    Search Time::3.688ms    
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    Microsemi
Part No. P4KE6.8C P4KE6.8CA P4KE9.1C P4KE8.2C P4KE7.5A P4KE7.5CA P4KE9.1CA P4KE8.2A P4KE8.2CA P4KE6.8A P4KE75A P4KE68A P4KE91C P4KE91CA P4KE300CA P4KE400A P4KE220C P4KE220CA P4KE75CA P4KE36C P4KE36CA P4KE24C P4KE24CA P4KE15CA P4KE250C P4KE250CA P4KE400CA P4KE39CA P4KE82A P4KE47CA P4KE56A P4KE36A P4KE82C P4KE82CA P4KE150C P4KE150CA P4KE68CA P4KE300A
OCR Text ... w i th mil - prf - 195 00 for jan, jant x, jan t xv, or jans ar e avail a b l e b y a d d in g mq, mx, mv, or msp prefixes respectiv e...24 21 22 .078 .078 .081 .081 p4ke15 p4ke15a p4ke16 p4ke16a 12.1 12.8 12.9 13.6 13.5 ...
Description Transient Voltage Suppressor

File Size 234.38K  /  4 Page

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Part No. D15S24A6RX22LF
OCR Text ... printed: jan 18, 2011 f f e d c b a 8 6 5 4 3 2 1 3 a b c d e f 1 2 4 5 6 7 8 copyright fci. rev f - 2006-04-17 b ...24 1.65 0.16 b a 12.55 0.085 2.8 0 -0.05 11.8 0.3 6 0.1 7.45 0.1 2 0.3 recess 0.11 0.11 3.65 0.05 ...
Description 15 CONTACT(S), FEMALE, D SUBMINIATURE CONNECTOR, SOLDER

File Size 286.76K  /  2 Page

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    K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R2716

Sunon, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NBMCCG6
OCR Text ...ry 2000 Page -1 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Revision History Version 1.0 (July 1999) - Preliminary - Based on the R...24-bit ROWA (row-activate) or ROWR (row-operation) packet. COL Pins: The principle use of these f...
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256 × 16/18位2 * 16属银行直接RDRAMTM

File Size 4,066.36K  /  64 Page

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    BUZ103SL Q67040-S4008-A2

SIEMENS AG
Infineon
Siemens Semiconductor Group
Part No. BUZ103SL Q67040-S4008-A2
OCR Text ... Semiconductor Group 1 30/Jan/1998 BUZ 103 SL SPP28N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature S...24 22 20 60 50 18 16 14 40 30 12 10 20 8 6 10 0 0 20 40 60 80 100 120 140...
Description SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) 28 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 SIPMOS功率晶体管(N通道增强模式的逻辑电平雪崩额定dv / dt的评价)
SIPMOS ? Power Transistor

File Size 118.10K  /  8 Page

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    ABB[The ABB Group]
Part No. 5SGA30J2501
OCR Text ...A 30J2501 Doc. No. 5SYA1213-02 Jan. 05 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate el...24 V = 0.1 Tj = 25 C Turn-on switching di/dtcrit Max. rate of rise of on-state current td tr to...
Description Gate turn-off Thyristor

File Size 212.64K  /  6 Page

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    15ETH06-N3

Vishay Siliconix
Part No. 15ETH06-N3
OCR Text jan-12 1 document number: 94002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseur...24 allowable case temperature (c) i f(av) - average forward current (a) 20 40 80 100 140 160 180 se...
Description Ultrafast Rectifier, 15 A Fred Pt?

File Size 198.60K  /  9 Page

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    Philips
NXP Semiconductors N.V.
Part No. 74LVC11DB118 74LVC11DB112 74LVC11BQ
OCR Text jan 13 integrated circuits 74lvc11 triple 3-input and gate 2004 jan 13 2 philips semiconductors product speci?cation triple 3-input and ga...24 ma 3.0 v cc - 1.0 -- v v ol low-level output voltage v i =v ih or v il i o =12ma 2.7 -- 0.40 v i ...
Description 74LVC11; Triple 3-input AND gate

File Size 88.29K  /  14 Page

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    H5N2512FL-M0 H5N2512FL-M0-ET2

Renesas Electronics Corporation
Part No. H5N2512FL-M0 H5N2512FL-M0-ET2
OCR Text jan 08, 2013 preliminary datasheet h5n2512fl-m0 250v - 18a - mos fet high speed power switching features ? low on-resistance r...24 -25 0 5 02 575 100 12 5 150 0.01 0.1 1 10 100 1000 0. 1 1 10 100 1000 tc = 25c 1 shot 1 10 100 10...
Description 250V - 18A - MOS FET High Speed Power Switching

File Size 97.11K  /  7 Page

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    K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R44

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7
OCR Text ...ry 2000 Page -1 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Revision History Version 1.0 (July 1999) - Preliminary - Based on the R...24-bit ROWA (row-activate) or ROWR (row-operation) packet. COL Pins: The principle use of these f...
Description 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

File Size 4,046.09K  /  64 Page

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    AOK42S60

Alpha & Omega Semiconductors
Part No. AOK42S60
OCR Text ...k42s60 40 g ds rev0: jan 2012 www.aosmd.com page 1 of 6 aotf42s60 symbol min typ max units 600 - - 650 ...24 0.28 w v sd - 0.84 - v i s maximum body-diode continuous current - - 39 a i sm - - 166 a c iss - ...
Description 600V 39A a MOS Power Transistor

File Size 266.52K  /  6 Page

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