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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
BUZ41A
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| OCR Text |
...n. typ. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current, pulsed 7c = 25 c inverse diode forward voltage vgs = 0 v, ip = 9 a reverse recovery time vr - 100 v, /f=/si d/f/df = 100 a/ms r... |
| Description |
Enhancement mode
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| File Size |
101.35K /
4 Page |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSP170P Q67041-S4018
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| OCR Text |
.... 0.54 nC Unit
Reverse Diode inverse diode continuous forward current T A = 25 C inverse diode direct current,pulsed T A = 25 C inverse diode forward voltage VGS = 0 V, IF = -3.8 A Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A... |
| Description |
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS ? Power Transistor
From old datasheet system
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| File Size |
151.13K /
9 Page |
View
it Online |
Download Datasheet |
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SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSP372 Q67000-S300 BSP372E-6327 BSP372E6327
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| OCR Text |
...meter Symbol min. Reverse Diode inverse diode continuous forward current IS A 0.8 1.7 6.8 V 1.1 ns C Values typ. max. Unit
TA = 25 C
inverse diode direct current,pulsed
ISM
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TA = 25 C
inverse diode forward voltage
VSD trr Qr... |
| Description |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管（N通道增强模式逻辑层次额定雪崩
1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
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| File Size |
166.09K /
9 Page |
View
it Online |
Download Datasheet |
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