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F1310N NX804 P6KE47 KDCNDTD 74AC32SJ 1N5405 LM7810D TTINY15L
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  ield Datasheet PDF File

For ield Found Datasheets File :: 147    Search Time::4.203ms    
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    Feeling Technology
Part No. FD2257H-G1
OCR Text ...90 t a ( o c) m a g n et ic f ield ( g au ss) bop, vdd= 4v brp, vdd= 4v bhyst, vdd= 4v bop, vdd=24v brp, vdd=24v bhyst, vdd=24v performance graphs figure.4 ...
Description Smart motor driver

File Size 242.29K  /  12 Page

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    SamHop Microelectronics...
Part No. STUD410S
OCR Text ield e ffect t rans is tor abs olute maximum r ating s (t a =25 c unles s otherwis e noted) s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ) 40v 30a 20 @ v gs = 10v 30 @ v gs =4.5v stu series to-252a a(d-pak...
Description S uper high dense cell design for low R DS (ON).

File Size 82.18K  /  8 Page

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    SamHop Microelectronics...
Part No. STUD426S
OCR Text ield e ffect t rans is tor to-252 and to-251 package. abs olute maximum r atings (ta=25 c unless otherwise noted) s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ) 40v 53a @ v gs =10v 10 @ v gs =4.5v feature...
Description Super high dense cell design for low RDS (ON).

File Size 111.06K  /  9 Page

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    SamHop Microelectronics...
Part No. STUD428S
OCR Text ield e ffect t rans is tor abs olute maximum r atings (ta=25 c unless otherwise noted) s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ) 40v 50a @ v gs =10v 10 @ v gs =4.5v stu series to-252a a(d-pak) std se...
Description S uper high dense cell design for low R DS (ON).

File Size 92.04K  /  9 Page

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    SamHop Microelectronics
Part No. STM6915
OCR Text ield e ffect t rans is tor s urface mount p ackage. t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient r j a 62.5 /w c a s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ? ) max 3...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 118.51K  /  7 Page

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    NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M16-T3-A

California Eastern Labs
Part No. NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M16-T3-A
OCR Text ...ifying it in the "find what:" f ield. caution : observe precautions when handling because these devices are sensitive to electrostatic discharge npn silicon germanium rf transistor nesg2021m 16 npn sige rf transistor ...
Description NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

File Size 839.58K  /  11 Page

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    Quantum Research Group ltd
Part No. QT110-D QT110H-D
OCR Text ...xample a wall or floor. 1.3.4 f ield s haping the electrode can be prevented from sensing in undesired directions with the assistance of metal shielding connected to circuit ground (figure 1-6). for example, on flat surfaces, the field can...
Description 0.5-6.5V; 20mA; charge-transfer touch sensor. For light switches, industrial panels, appliance control, security systems, access systems, pointing devices, elevator buttoms, toys & games

File Size 295.42K  /  13 Page

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