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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STW11NB80 6750
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| OCR Text |
...DSS 800 V
R DS(on) < 0.8
ID 11 A
TYPICAL RDS(on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% A...11A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C
(*) P... |
| Description |
N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
From old datasheet system
N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH TM MOSFET
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| File Size |
86.25K /
8 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R321884M-FC25 K7R323684M-FC16 K7R323684M K7R323684M-FC25 K7R323684M-FC20 K7R640982M K7R323682
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| OCR Text |
...ock diagram 1. Correct the JTAG ID register definition 2. Correct the AC timing parameter (delete the tKHKH Max value) 3. Change the Isb1 cu...11A, 1A 1H 9A,4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9... |
| Description |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
193.61K /
18 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
http://
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| Part No. |
FCP11N60 FCPF11N60
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| OCR Text |
...bsolute Maximum Ratings
Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
TC = 25C unless otherwise noted
...11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ... |
| Description |
600V N-Channel SuperFET
SuperFET 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
807.57K /
10 Page |
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it Online |
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