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    2SK3062-Z

NEC
Part No. 2SK3062-Z
OCR Text ...valanche Energy Note2 Note2 ias EAS Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25 C, VDD = 30 V, RG = 25 , VGS = 20 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before us...
Description Nch MOS FET for large current switching

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    SIHFPS43N50K-E3 RFPS43N50K

Vishay Siliconix
Part No. SIHFPS43N50K-E3 RFPS43N50K
OCR Text ... = 25 C, L = 0.82 mH, RG = 25 , ias = 47 A (see fig. 12c). c. ISD 47 A, dI/dt 230 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91262 S-81367-R...
Description RFPS43N50K

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    UPA1552 UPA1552B UPA1552BH

NEC[NEC]
Part No. UPA1552 UPA1552B UPA1552BH
OCR Text ... PT1 Note 4 PT2 Note 5 TCH Tstg ias Note 6 EAS Note 6 60 20 5.0 20 28 3.5 150 -55 to +150 5.0 2.5 V V A/unit A/unit W W C C A mJ 1 ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source Notes 1. VGS = 0 3. PW 1...
Description N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

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    RF4E20N50S

Fairchild Semiconductor
Part No. RF4E20N50S
OCR Text ...25oC, L = 4.3mH, RGS = 25, Peak ias = 20A (Figures 15, 16). Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 20 16 0.8 0.6 0.4 0.2 0 12 8 4 0 0 50 100 150 25 50 75 100 125 150 TC, C...
Description 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs

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    IRFP460A

Fairchild Semiconductor
Part No. IRFP460A
OCR Text ...g TJ = 25C, L = 7.0mH, RG = 25, ias = 14A ISD </= 14A, di/dt </= 130A/s, VDD </= V(BR)DSS, TJ </= 150C Pulse width </= 300s; duty cycle </= 2% Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Source to Drain Dio...
Description 20A,500V,0.22 Ohm,N-Channel SMPS Power MOSFET

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    NEC, Corp.
NEC Corp.
Part No. 2SJ607-Z 2SJ607-ZJ 2SJ607-S
OCR Text ...valanche Energy Note2 Note2 ias EAS Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before us...
Description Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,TO-262,TO-263
MOS FIELD EFFECT TRANSISTOR MOS场效应管

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    美丽微半导体有限公司
缇?附寰??瀵间???????
Part No. MM3Z MM3Z47VT1 MM3Z5V6T1 MM3Z3V6T1 MM3Z75VT1
OCR Text ... C , C APAC ITANC E (pF ) 0 V B ias 1 V B ias IR , LE AK AG E C UR R E NT ( m A) 1000 100 10 1.0 0.1 0.01 Figure 2. Typical Forward Voltage 100 +150 C 10 B ias AT 50% OF V Z NOM 0.001 +25 C -5 5 C 0 10 20 30 40 50 V Z ,...
Description Surface Mount Zener Diodes
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
CAP 0.01UF 50V 10% X7R RAD.10 .20X.20 BULK

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    FDB42AN15A0 FDP42AN15A0

Fairchild Semiconductor
Part No. FDB42AN15A0 FDP42AN15A0
OCR Text ...: Starting TJ = 25C, L = 0.2mH, ias = 30A. (c)2002 Fairchild Semiconductor Corporation FDP42AN15A0 / FDB42AN15A0 / FDI42AN15A0 Rev. B FDP42AN15A0 / FDB42AN15A0 / FDI42AN15A0 Typical Characteristics TC = 25C unless otherwise not...
Description N-Channel PowerTrench ?MOSFET 150V, 35A, 42mOhm

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    UPA1500 UPA1500B UPA1500BH UPA1500BH-AZ

NEC[NEC]
NEC Corp.
Part No. UPA1500 UPA1500B UPA1500BH UPA1500BH-AZ
OCR Text ...to 150 Single Avalanche Current ias Note 7 3.0 Single Avalanche Energy EAS Note 7 0.9 Notes 1. VGS = 0 2. VDS = 0 3. PW 10 s, Duty Cycle 1 % 4. Rating of Surge Absorber 5. 4 Circuits, TC = 25 C 6. 4 Circuits, TA = 25 C 7. Starting TCH = 2...
Description    N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
3 A, 60 V, 0.024 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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    UPA1523 UPA1523B UPA1523BH

NEC[NEC]
Part No. UPA1523 UPA1523B UPA1523BH
OCR Text ...ulse) *1 PT1 *2 PT2 *3 TCH Tstg ias *4 EAS *4 *2 *4 -60 20 2.0 8.0 28 3.5 150 -2.0 0.4 V V A/unit A/unit W W C A mJ 2 1 4 6 8 10 ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source -55 to + 150 C ...
Description    P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

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