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NXP Semiconductors N.V.
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| Part No. |
BLF6G20LS-75 BLF6G20-75
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| OCR Text |
...000 mhz. 1.2 features n typical gsm edge performance at frequencies of 1930 mhz and 1990 mhz, a supply voltage of 28 v and an i dq of 550 ma: u average output power = 29.5 w u gain=19db u ef?ciency = 37.5 % u acpr 400k = - 61.5 dbc u acpr ... |
| Description |
Power LDMOS transistor BLF6G20LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G20LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G20-75<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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| File Size |
85.36K /
12 Page |
 View
it Online |
Download Datasheet
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Freescale Semiconductor
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| Part No. |
MRF5S9101NBR1 MRF5S9101NR1
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| OCR Text |
...e Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout... |
| Description |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
573.86K /
20 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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