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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
PTF080451E PTF080451
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OCR Text |
goldmos FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical EDGE performance - Average outpu... |
Description |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz LDMOS RF Power Field Effect Transistor 45 W 869-960 MHz LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
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File Size |
154.66K /
9 Page |
View
it Online |
Download Datasheet |
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http:// INFINEON[Infineon Technologies AG]
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Part No. |
PTF211802A PTF211802E PTF211802
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OCR Text |
...hed, laterally double-diffused, goldmos push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical two... |
Description |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
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File Size |
165.14K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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