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12S15 W742C810 N90C10 MLV2012 P101C GT50A1 ATTINY26 74LCX138
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  gate hex Datasheet PDF File

For gate hex Found Datasheets File :: 2107    Search Time::1.141ms    
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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text ...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.39K  /  2 Page

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text ...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ...tching speeds through optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Fast Recovery Body Diode * Lower Leakag...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ...tching speeds through optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 1...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M60JN

ADPOW[Advanced Power Technology]
Part No. APT50M60JN
OCR Text ...@ TC = 25C Pulsed Drain Current gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor 1 SINGLE DIE ISOTOP(R) PAC...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description POWER MOS IV 500V 71A 0.060 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 60.22K  /  4 Page

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    APT8011JLL APT8011

ADPOW[Advanced Power Technology]
Part No. APT8011JLL APT8011
OCR Text ...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.67K  /  2 Page

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    APT8011 APT8011JFLL

ADPOW[Advanced Power Technology]
Part No. APT8011 APT8011JFLL
OCR Text ...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.29K  /  2 Page

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    APT8014JFLL

Advanced Power Technology
Part No. APT8014JFLL
OCR Text ...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.42K  /  2 Page

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For gate hex Found Datasheets File :: 2107    Search Time::1.141ms    
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