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For elevated Found Datasheets File :: 5125    Search Time::2.953ms    
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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text ... Energy Capability Specified at elevated Temperature * Low Stored Gate Charge for Efficient Switching * Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor -- Absorbs High Energy in the Avalanche Mode * So...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature MTP12N10E Motorola Preferred Device TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM (R) D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless ...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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    MTP12P10 MTP12P10_D ON2547

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP12P10 MTP12P10_D ON2547
OCR Text ...), VGS(th) and SOA Specified at elevated Temperature * Rugged -- SOA is Power Dissipation Limited * Source-to-Drain Diode Characterized for Use With Inductive Loads MTP12P10 TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM P-Cha...
Description From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

File Size 190.83K  /  6 Page

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    MTP1302 MTP1302_D ON2549 ON2548

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP1302 MTP1302_D ON2549 ON2548
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature MTP1302 TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mW TM CASE 221A-06 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-...
Description TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
From old datasheet system

File Size 163.19K  /  8 Page

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    MTP1306 MTP1306_D ON2551 ON2550

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP1306 MTP1306_D ON2551 ON2550
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature MTP1306 TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM CASE 221A-06 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-t...
Description TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
From old datasheet system

File Size 168.21K  /  8 Page

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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature * Static Parameters are the Same for both TMOS V and TMOS E-FET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP15N06V ON2554

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06V ON2554
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature * Static Parameters are the Same for both TMOS V and TMOS E-FET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
From old datasheet system

File Size 163.67K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature MTP16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM (R) D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless oth...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature * Static Parameters are the Same for both TMOS V and TMOS E-FET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-...
Description TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text ...* IDSS and VDS(on) Specified at elevated Temperature G S MTP2P50E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM (R) D CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless oth...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

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For elevated Found Datasheets File :: 5125    Search Time::2.953ms    
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