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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD4000AF
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| OCR Text |
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The FPD4000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical paras... |
| Description |
4W PACKAGED POWER PHEMT
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| File Size |
705.05K /
9 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD3000SOT89
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| OCR Text |
... The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 m Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed ... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
390.69K /
8 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2250SOT89
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| OCR Text |
... The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 2250 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recess... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
380.69K /
8 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2250DFN
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| OCR Text |
...NS The FPD2250DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recess... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
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| File Size |
151.56K /
5 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD200P70
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| OCR Text |
...ONS The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 200 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD20... |
| Description |
HI-FREQUENCY PACKAGED PHEMT
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| File Size |
187.65K /
3 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2000AS
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| OCR Text |
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The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical appli... |
| Description |
2W PACKAGED POWER PHEMT
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| File Size |
278.08K /
7 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD1000AS
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| OCR Text |
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The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical appli... |
| Description |
1W PACKAGED POWER PHEMT
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| File Size |
530.41K /
8 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD10000AF
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| OCR Text |
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The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical paras... |
| Description |
10W PACKAGED POWER PHEMT
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| File Size |
182.95K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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