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ADG1433 SM6T10CA BLH3356 PIC16F73 8C922 A6225 2004A 2SK1295
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  9.7a Datasheet PDF File

For 9.7a Found Datasheets File :: 9741    Search Time::2.968ms    
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    INFINEON[Infineon Technologies AG]
Part No. SPP11N60C3 Q67040-S4395 Q67040-S4396 Q67042-S4403 SPB11N60C3 SPBI11N60C3 SPI11N60C3
OCR Text ...) IDSS 600 2.1 700 3 3.9 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS I...7A, Tj=25C VGS =10V, ID=7A, Tj=150C Gate input resistance f = 1 MHz, open drain RG - 1Re...
Description Cool MOS Power Transistor 酷MOS功率晶体

File Size 191.67K  /  14 Page

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    PCA9549D

NXP Semiconductors
Part No. PCA9549D
OCR Text ... 2A 2B 3A 3B 1 2 3 4 5 6 7 8 9 24 VDD 23 SDA 22 SCL 21 A2 20 8A 19 8B 18 7A 17 7B 16 6A 15 6B 14 5A 13 5B 002aaa992 A0 A1 RESET 1A 1B 2A 2B 3A 3B 1 2 3 4 5 6 7 8 9 24 VDD 23 SDA 22 SCL 21 A2 20 8A 19 8B 18 7A 17 7B 16 6A 15 ...
Description Octal bus switch with individually I2C-bus controlled enables

File Size 126.57K  /  24 Page

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    DMP3160L DMP3160L-7

Diodes Incorporated
Diodes Inc.
Diodes, Inc.
Part No. DMP3160L DMP3160L-7
OCR Text ... 1.5 1 0.5 0 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.3...7A VGS = -4.5V ID = -2.0A 0.1 T A = -55C 0 0.5 0.5 1 1.5 2 2.5 3 -ID, DRAIN CURRENT (...
Description P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2.7 A, 20 V, 0.122 ohm, P-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC PACKAGE-3

File Size 101.82K  /  4 Page

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    Advanced Power Electronics
Part No. 4501GM
OCR Text ... Typ. 6 8.4 1.4 4.7 5 8 18.5 9 485 80 75 Max. Units 28 42 3 1 25 100 13.5 770 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF BVDS...7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/s Min. - Typ. 19 11 Max. Units 1.2 V ns nC Reverse ...
Description Search --To AP4501GM

File Size 238.81K  /  8 Page

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    IRHF67230 IRHF63230

International Rectifier
Part No. IRHF67230 IRHF63230
OCR Text 9.1 i d @ v gs = 12v, t c = 100c continuous drain current 5.7 i dm pulsed drain current 36.4 p d @ t c = 25c max. power dissipati...7a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma ? v gs(th) /...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 201.32K  /  9 Page

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    Hitachi
Part No. 628512LP
OCR Text 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes igher density, higher performan...7A 65 ns www.datasheet4u.com ns HM628512LP-7 70 HM628512LP-5SL HM628512LP-7SL HM628512FP-5 HM628512F...
Description Search --To HM628512LP

File Size 128.94K  /  15 Page

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    SKB02N6007

Infineon Technologies AG
Part No. SKB02N6007
OCR Text ...ymbol VCE IC Value 600 6.0 2.9 Unit V A ICpul s IF 12 12 6.0 2.9 IFpul s VGE tSC Ptot 12 20 10 30 V s W VGE = 15V, VCC 60...7A 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50C 75C 100...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 1,149.10K  /  13 Page

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    AP05N50IB-HF AP05N50IB-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP05N50IB-HF AP05N50IB-HF-14
OCR Text ... junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 4 5 02468 v ...7a v g =10v 0 1 2 3 4 5 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fast Switching Characteristic

File Size 94.10K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU09P06PL SPD09P06PL
OCR Text ... rated dv/dt rated -60 0.25 -9.7 P-TO252 V Drain pin 2 Type SPD09P06PL SPU09P06PL Package P-TO252 P-TO251-3-1 Ordering Co...7A, VDS =-48, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operatin...
Description Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.25
SIPMOS Power-Transistor
From old datasheet system

File Size 228.11K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHLF77110 IRHLF73110
OCR Text ... 3.7 24 23 0.18 10 43 6.0 2.3 4.9 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns C 300 (0.063in/1.6mm from case for 10...7A VDS = VGS, ID = 250A VDS = 10V, IDS = 3.7A A VDS= 80V ,VGS= 0V VDS = 80V, VGS = 0V, TJ =125C VGS ...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)

File Size 203.72K  /  9 Page

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