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  865 875 Datasheet PDF File

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    LD2980CM48TR LD2980ABM48TR LD2980 LD2980-SERIES

SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
Part No. LD2980CM48TR LD2980ABM48TR LD2980 LD2980-SERIES
OCR Text ...0 460 600 1200 Typ. 2.85 Max. 2.865 2.872 2.922 3.015 3.023 3.075 3.216 3.225 3.28 3.317 3.325 3.383 3.819 3.829 3.895 4.875 4.887 4.971 5.025 5.038 5.125 Unit V V V V V V V V V V V V V V V V V V V V V mA %/V in -40 < TJ < 125 oC Vo ...
Description VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT

File Size 146.94K  /  11 Page

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    VRF3933

Microsemi Corporation
Part No. VRF3933
OCR Text ...5 b 0.265 0.270 0.275 c 0.860 0.865 0.870 d 1.130 1.135 1.140 e 0.545 0.550 0.555 f 0.003 0.005 0.007 g 0.098 0.103 0.108 h 0.150 0.160 0.17...875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 ...
Description RF POWER VERTICAL MOSFET

File Size 646.85K  /  6 Page

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    AGR09030E AGR09030EF AGR09030EU

TriQuint Semiconductor
Part No. AGR09030E AGR09030EF AGR09030EU
OCR Text 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal ...875 880 885 FREQUENCY (MHz)X 890 895 TEST CONDITIONS: VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 C, W...
Description 30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET

File Size 288.58K  /  7 Page

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    AGR09085E AGR09085EF AGR09085EU

TriQuint Semiconductor
Part No. AGR09085E AGR09085EF AGR09085EU
OCR Text 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconduc...875 880 885 890 895 -18 900 FREQUENCY (MHz)A TEST CONDITIONS: VDD = 28 Vdc, IDQ =...
Description 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET

File Size 304.52K  /  8 Page

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    MRF9085LR306

Freescale Semiconductor, Inc
Part No. MRF9085LR306
OCR Text ...lications with frequencies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal for large - signal,...875 880 885 890 895 900 p out , output power (watts) avg. p out , output power (watts) cw avg. g ps ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 328.35K  /  12 Page

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    Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Part No. MRF5S9070NR1
OCR Text ... GSM Test Fixture Optimized for 865 - 895 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 865 - 895 MHz Power Gain Drain Eff...875 880 885 890 895 f, FREQUENCY (MHz) Gps D VDD = 26 Vdc, Pout = 14 W (Avg.), IDQ = 600 mA Single -...
Description 880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors

File Size 444.63K  /  12 Page

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    EPA040A EPA040AV

Excelics Semiconductor, Inc.
Part No. EPA040A EPA040AV
OCR Text ...6.4 0.493 - 40.6 24.0 0.865 122.5 1.295 - 22.5 0.063 - 8.1 0.481 - 177.0 6.0 0.812 - 135.8 5.262 89.9 0.05...875 144.1 1.734 3.2 0.052 - 20.3 0.401 - 125.7 38.0 0.982 91.8 0.466 - 113.1...
Description High Efficiency Heterojunction Power FET

File Size 46.62K  /  2 Page

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    MRF9120R3 MRF9120LR3 MRF9120

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MRF9120R3 MRF9120LR3 MRF9120
OCR Text ...lications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, ...875 880 885 890 895 900 f, FREQUENCY (MHz) -10 -12 -14 -16 -18 Freescale Semiconductor, Inc. ...
Description RF Power Field Effect Transistors

File Size 311.87K  /  12 Page

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    MRF9085 MRF9085LR3 MRF9085LSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF9085 MRF9085LR3 MRF9085LSR3
OCR Text ...lications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal,...875 880 885 f, FREQUENCY (MHz) 890 895 900 IMD Gps h VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 700 mA Two...
Description 128K 3.3 VOLT SERIAL CONFIGURATION PROM
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

File Size 487.99K  /  8 Page

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    Motorola
Part No. MFR9180
OCR Text ...lications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, c...875 880 885 f, FREQUENCY (MHz) 890 895 -36 -38 900 IMD, INTERMODULATION DISTORTION (dBc) -10 -...
Description RF Power Field Effect Transistors

File Size 339.88K  /  12 Page

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