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ADPOW[Advanced Power Technology]
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| Part No. |
APTM120A29FT
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800V ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5
Min
Typ 10.3 1.54 0.26 374 48 240 20 15... |
| Description |
Phase Leg MOSFET Power Module
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| File Size |
310.23K /
6 Page |
 View
it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A29FTG
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800V ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5
Min
Typ 10.3 1.54 0.26 374 48 240 20 15... |
| Description |
Phase Leg MOSFET Power Module
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| File Size |
286.52K /
6 Page |
View
it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A20SG
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800V ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8
Min
Typ 15.2 2.2 0.42 600 84 390 10 10 6... |
| Description |
Phase leg Series & parallel diodes MOSFET Power Module
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| File Size |
268.76K /
6 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM120A20D
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800V ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8
Min
Typ 15.2 2.2 0.42 600 84 390 10 10 6... |
| Description |
Phase leg with Series diodes MOSFET Power Module
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| File Size |
296.82K /
6 Page |
View
it Online |
Download Datasheet |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A20DG
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800V ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8
Min
Typ 15.2 2.2 0.42 600 84 390 10 10 6... |
| Description |
Phase leg with Series diodes MOSFET Power Module 50 A, 1200 V, 0.24 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
267.42K /
6 Page |
View
it Online |
Download Datasheet |
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http://
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A15FG
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800V ID = 60A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2
Min
Typ 20.6 3.08 0.52 748 96 480 20 15... |
| Description |
Phase leg MOSFET Power Module
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| File Size |
276.96K /
7 Page |
View
it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100A13DG
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| OCR Text |
...S = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V
130 3
Max 600 2 156 5 450
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Q... |
| Description |
Phase leg with Series diodes MOSFET Power Module
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| File Size |
268.23K /
6 Page |
View
it Online |
Download Datasheet |
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International Rectifier
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| Part No. |
IRHY7G30CMSE
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| OCR Text |
...A VDS > 15V, IDS = 0.76A VDS = 800V ,VGS=0V VDS = 800V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =12V, ID = 1.2A VDS = 300V VDD = 500V, ID = 1.2A, VGS =12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage 1000 BV DSS/T J Temperature... |
| Description |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
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| File Size |
108.18K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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