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Hamamatsu Photonics
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| Part No. |
G7150-16
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| OCR Text |
...VR=10 mV =p =p Condition Min. 0.8 0.85 G7150-16 Typ. 0.9 to 1.7 1.55 0.9 0.95 5 30 100 100 5 x 1012 2 x 10-14 Max. 25 Min. 0.8 0.85 G7151-16 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.2 300 10 1000 5 x 1012 3 x 10-15 Max. 1 Unit m m A/W nA MHz pF M cm... |
| Description |
InGaAs PIN photodiode array
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| File Size |
99.95K /
2 Page |
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IRF[International Rectifier]
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| Part No. |
IRKT500-16 IRKH500-08 IRKH500-12 IRKH500-14 IRKH500-16 IRKL500-08 IRKL500-12 IRKL500-14 IRKL500-16 IRKT500 IRKT500-08 IRKT500-12 IRKT500-14
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| OCR Text |
...
IRK.500..
500 82 785 82 17.8 18.7 1591 1452 15910 800 to 1600 - 40 to 150 - 40 to 130
Units
A C A C KA KA KA 2s KA 2s KA2s V C C
...16
VRRM/VDRM, maximum repetitive peak reverse voltage V
800 1200 1400 1600
VRSM , maximum non... |
| Description |
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a Super MAGN-A-Pak package
1200V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1400V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
SUPER MAGN-A-pak Power Modules
1200V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1400V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
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| File Size |
96.01K /
8 Page |
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it Online |
Download Datasheet |
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HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
G7151-16 G7150 G7150-16
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| OCR Text |
...151-16
0
10
0 0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-1 0.8
1.0
1.2
1.4
1.6
1.8
1 0.01
0.1
1
10
WAVELENGTH (m)
KIRDB0002EB
WAVELENGTH (m)
KIRDB0042EA
REVERSE VOLTAGE (V)
KIRDB... |
| Description |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
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| File Size |
78.72K /
2 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB60NE06-16
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| OCR Text |
...rent ISD = 60 A VGS = 0 100 0.4 8 Test Conditions Min. Typ. Max. 60 240 1.5 Unit A A V ns C A
di/dt = 100A/s ISD = 60 A Tj = 150C VDD = 3...16
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Re... |
| Description |
N-CHANNEL 60V - 0.013 OHM - 60A D2PAK STRIPFET II POWER MOSFET
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| File Size |
352.09K /
9 Page |
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ST Microelectronics
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| Part No. |
STP60NE06-16 STP60NE06-16FP
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| OCR Text |
...= 100 A/s o T j = 150 C 100 0.4 8 Test Conditions Min. Typ. Max. 60 240 1.5 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cyc...16/FP
Thermal Impedance for TO-220 Thermal Impedance forTO-220FP
Output Characteristics
Trans... |
| Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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| File Size |
396.54K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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