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For 556 Found Datasheets File :: 111071 Search Time::5.781ms
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				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...--- --- --- --- --- --- 0.031 1.5 1.8 --- --- --- --- --- --- 160 41 66 13 120 130 130 4.5 7.5 6450 1690 840 5350 1520 2210 --- --- 2.0 2.3 ...56 67 280 A 1080 1.3 84 100 V ns nC Conditions MOSFET symbol showing the integral reverse G S D...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	...-- --- --- Typ. --- 0.084 10.5 --- --- --- --- --- --- 89 21 30 12 80 55 49 4.5 7.5 3270 520 78 3500 340 640 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 12.6 m VGS = 10V, ID = 48A 4.0 V VDS = 10...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	IRF36 IRF-36
OCR Text	...4 20 14 9.9 7.6 6.3 6.3 6.3 6.2 5.7 5.3 4.8 3.8 3.5 3.3 3.0 2.8 2.6 2.4 2.25 2.10 1.95 1.85 1.40 RATED DCR DC MAX. CURRENT () (mA) 0.15 0.16...56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10 12 15 18 22 27 33 39 47 56 68 82 100...
Description	Inductors Epoxy Conformal Coated, Axial Leaded
File Size	113.79K / 1 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	... 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 Min. Typ. 2890 590 230 140 18 75 19 43 85 56 190 27 135 35 120 130 98 ns nC pF Max. Unit SOURCE - DRAIN DIODE RATINGS AN...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...TC=25 C ) 56 + 20 _ 261 14 5.5 6.5 55 0.36 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds C ...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...re, for 10 seconds Max. 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS To...56 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.85 VGS =...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	..., 6-32 or M3 screw Max. 8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V V/ns C ...56 Max. Units Conditions --- S VDS = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 123 12.70 19.05 -100V -9.3A W 0.31W 10.41 10.92 2.54 BSC ...
Description	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	...6 3.8 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...56 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -8.4A, VGS = 0V --- 130 190 ns TJ = 25C, IF ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	...0 -56 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Amb...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

For 556 Found Datasheets File :: 111071 Search Time::5.781ms
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