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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E
OCR Text	512k x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512k x 16Bit x 2 Banks Synchronous DRAM ...
Description	1M x 16 SDRAM
File Size	671.65K / 42 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600
OCR Text	... 2004 SDRAM 16Mb H-die(x16) 512k x 16Bit x 2 Banks SDRAM FEATURES * * * * 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, ...
Description	16Mb H-die SDRAM Specification
File Size	106.31K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
OCR Text	...2004 SDRAM 64Mb H-die (x32) 512k x 32Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs -. CAS latency (2 & 3) -. Bu...
Description	64Mb (512k x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512k x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512k x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
File Size	115.81K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KM416S1020C
OCR Text	512k x 16bit x 2 banks synchronous dram lvttl samsung electronics reserves the right to change products or specification without notice. km416s1020c cmos sdram - 2 - rev. 0.6 (sep. 1998) revision history revision 0.6 (september 10, 1...
Description	1M x 16 SDRAM
File Size	779.03K / 43 Page	View it Online	Download Datasheet

				Atmel Corp. ATMEL[ATMEL Corporation]
Part No.	AT25F1024 AT25F1024N-10SI-2.7 AT25F512 AT25F512N-10SI-2.7
OCR Text	...wo Sectors with 32K Bytes Each (512k) - Four Sectors with 32K Bytes Each (1M) - 128 Pages per Sector Product Identification Mode Low-voltage Operation - 2.7 (VCC = 2.7V to 3.6V) Sector Write Protection Write Protect (WP) Pin and Write Disab...
Description	High Speed CMOS Logic Hex Buffers/Line Drivers with Inverting 3-State Outputs 16-PDIP -55 to 125 SPI Serial Memory
File Size	147.73K / 17 Page	View it Online	Download Datasheet

				INTEGRATED SILICON SOLUTION INC
Part No.	IS62C51216AL-45MLI
OCR Text	... placing orders for products. 512k x 16 low voltage, ultra low power cmos static ram features ? high-speed access time: 45ns, 55ns ? cmos low power operation C 36 mw (typical) operating C 12 w (typical)...
Description	512k X 16 STANDARD SRAM, 45 ns, PBGA48
File Size	255.99K / 16 Page	View it Online	Download Datasheet


Part No.	IS61LF51218A-6.5B3 IS61LF51218A-6.5TQ
OCR Text	...ailable january 2010 256k x 36, 512k x 18 9 mb synchronous flow-through static ram description the issi is61lf/vf25636a, is64lf25636a and is61lf/ vf51218a are high-speed, low-power synchronous static rams designed to prov...
Description	512k X 18 CACHE SRAM, 6.5 ns, PBGA165 512k X 18 CACHE SRAM, 6.5 ns, PQFP100
File Size	588.39K / 32 Page	View it Online	Download Datasheet

				GSI TECHNOLOGY
Part No.	GS8161E18T-150
OCR Text	512k x 32, 512k x 36 18mb sync burst srams 250 mhz ? 133 mhz 2.5 v or 3.3 v v dd 2.5 v or 3.3 v i/o 100-pin tqfp & 165-bump bga commercial temp industrial temp rev: 2.14 3/2005 1/36 ? 1999, gsi technology specifications cited are subject ...
Description	1M X 18 CACHE SRAM, 7.5 ns, PQFP100
File Size	600.42K / 36 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F004SU-Z1
OCR Text	512k x 8) Flash Memory TOP VIEW * 512k x 8 Word Configuration * 5 V Write/Erase Operation (5 V VPP) - No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 ...
Description	4M (512k 】 8) Flash Memory 4M (512k 8) Flash Memory
File Size	179.96K / 32 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F004SU-Z9
OCR Text	512k x 8 Word Configuration * 2.7 V Write/Erase Operation (5 V 0.5 V VPP, 3.0 V 0.3 V VCC, +15C to +35C) - No Requirement For DC/DC Converter To Write/Erase 1 A GND B C D E F A17 A10 A14 A16 A15 2 DQ6 DQ7 NC A13 A11 A12 3 VCC DQ...
Description	4M (512 】 8) Flash Memory 4M (512 8) Flash Memory
File Size	185.42K / 31 Page	View it Online	Download Datasheet

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