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				ADPOW[Advanced Power Technology]
Part No.	APT5019HVR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5816 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...08 (.200) BSC 050-5816 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	POWER MOS V 500V 24A 0.190 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...26HVR UNIT Volts Amps 500 18.5 74 30 40 200 1.6 -55 to 150 300 18.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5820 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8058HVR
OCR Text	...58HVR UNIT Volts Amps 800 13.5 54 30 40 250 2.0 -55 to 150 300 13.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5815 Rev A Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
File Size	60.35K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...67HVR UNIT Volts Amps 800 11.5 46 30 40 200 1.6 -55 to 150 300 11.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5818 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5632 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description	POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5608 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	5 - 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features * Low Noise Figure: 0.5 dB Typ. @ 2 GHz * High Output ...08 S12 Mag. 0.051 0.096 0.131 0.158 0.177 0.188 0.193 0.193 0.191 0.185 0.179 0.172 0.167 0.162 0...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	...igh Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline...08 2.0 .24 6.0 2 SOURCE .02 .50 .003 .002 .08 .05 .070 1.78 .05 1.3 Notes: (u...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	...kage range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between...08 2.0 .24 6.0 2 SOURCE .02 .50 .003 .002 .08 .05 .070 1.78 .05 1.3 .034 .86 ...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... Powerex, Inc. POWEREX[Powerex Power Semiconductors] Powerex Power Semiconductor...
Part No.	CD430840A CD431240A CD431640A CD4340A
OCR Text	... UL Recognized (E78240) 4 5 2 7 6 ~ 1 + CONNECTION DIAGRAM - 3 Benefits: T No Additional Insulation Componen...08 12 16 Current Amperes (x 1) 40 Note: Dimensions are for reference only. Revision Date: ...
Description	POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 63 A, 800 V, SCR POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 的POW - r -隔离台BLOk反应腔双可控硅模块四零安高达1600伏特
File Size	99.27K / 4 Page	View it Online	Download Datasheet

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