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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S281632D-NC60 K4S281632D-NC75 K4S281632D-NC7C K4S281632D-NL1H K4S281632D-NL60 K4S281632D-NL75 K4S281632D-NL7C K4S281632D-TC K4S281632D-TC_L60 K4S281632D-TC75 K4S281632D-TL75 K4S281632D-TC_L1H K4S281632D-TC_L1L K4S281632D-TC_L55 K4S281632D-TC_L75 K4S281632D-TC_L7C K4S281632D-TC/L1H K4S281632D-TC/L1L K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L75 K4S281632D-TC/L7C K4S281632D-TL60 K4S281632D-TC7C K4S281632D-TL55 K4S281632D-TL7C
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Description |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16bit x 4 banks synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
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File Size |
110.59K /
11 Page |
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HYNIx[Hynix Semiconductor]
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Part No. |
HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 HY57V281620ALT-P HY57V281620AT-6 HY57V281620AT-7 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-P HY57V281620AT-K HY57V281620AT-S HY57V281620ALT-K HY57V281620ALT-H HY57V281620ALT-S HY57V281620A
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Description |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz 4 banks x 2M x 16bitS synchronoUS DRAM
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File Size |
94.05K /
13 Page |
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Download Datasheet |
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HYNIx[Hynix Semiconductor] Hynix Semiconductor, Inc.
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Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1m x 16bit EDO DRAM 100万16 EDO公司的DRAM 1m x 16bit EDO DRAM 1m x 16 EDO DRAM, 50 ns, PDSO44 1m x 16bit EDO DRAM 1m x 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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File Size |
105.82K /
12 Page |
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Download Datasheet |
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Samsung Electronic Samsung Semiconductor Co., Ltd. Data Device, Corp. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
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Description |
2M x 16bit x 4 banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M x 16 synchronoUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M x 16 synchronoUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M x 16 synchronoUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
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File Size |
111.60K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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