300 sec pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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300 sec Datasheet PDF File

For 300 sec Found Datasheets File :: 42519 Search Time::1.375ms
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				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	...20 430 -11 14 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Juncti...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - V DD IRF9...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	...20 430 -11 14 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - VDD IRF95...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	...ate-to-Source Voltage (V) A 300 V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9952 100 ...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	..., C a p a c ita n c e (p F ) 300 C iss C os s 200 12 8 100 C rs s 4 0 1 10 100 A 0 0 2 4 6 8 10 -VD S , Dr...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9953 Packa...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	..., Gate-to-Source Voltage (V) 300 V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9956 Packa...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	...0 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG VDD ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...0 180 -10 6.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Juncti...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG VDD ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...0 180 -10 6.8 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - 15 RG ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

For 300 sec Found Datasheets File :: 42519 Search Time::1.375ms
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