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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SFF9250L
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| OCR Text |
...0.23 ID = -12.6 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ ,...9mH, IAS=-19.5A, VDD=-50V, RG=27, Starting TJ =25 ISD-19.5A, di/dt500A/s, VDDBVDSS , Starting TJ =2... |
| Description |
Advanced Power MOSFET
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| File Size |
542.30K /
7 Page |
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AUK[AUK corp]
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| Part No. |
STK0825F
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| OCR Text |
...ormation
Outline Dimensions
3.05~3.35 9.80~10.20
unit : mm
2.60~3.00
15.40~15.80
12.20~12.60
9.10~9.30
12.40~13.00
1....9mH, IAS=8A, VDD=50V, RG=27 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent ... |
| Description |
Advanced Power MOSFET
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| File Size |
468.89K /
8 Page |
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WISDOM[Wisdom technologies Int`l]
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| Part No. |
WFF634
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| OCR Text |
... Drain
1. Gate
3. Source
General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS ...9mH, IAS = 8.1A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.1A, di/dt 300A/s, VDD BVDSS, Sta... |
| Description |
N-Channel MOSFET
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| File Size |
796.15K /
7 Page |
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Wisdom Semiconductor Inc. WISDOM[Wisdom technologies Int`l]
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| Part No. |
WFF740
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| OCR Text |
... Drain
1. Gate
3. Source
General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS ...9mH, IAS = 10.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10.0A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
N-Channel MOSFET
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| File Size |
820.39K /
7 Page |
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WISDOM[Wisdom technologies Int`l]
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| Part No. |
WFP740
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| OCR Text |
...0V, RG = 25 , Starting TJ = 25C 3. ISD 10.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics
10
1
ID, D... |
| Description |
N-Channel MOSFET
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| File Size |
793.31K /
6 Page |
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Wisdom technologies Int... WISDOM[Wisdom technologies Int`l]
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| Part No. |
WFR630
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| OCR Text |
... Drain
1. Gate
3. Source
General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS ...9mH, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9A, di/dt 300A/s, VDD BVDSS, Startin... |
| Description |
N-Channel MOSFET
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| File Size |
795.61K /
7 Page |
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Fairchild Semiconductor
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| Part No. |
FDI12N50TU FDB12N50TM FDI12N50 FDB12N50
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| OCR Text |
...Note 2) (Note 1) (Note 1) (Note 3) Ratings 500 30 11.5 6.9 46 456 11.5 16.7 4.5 165 1.33 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
...9mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 11.5A, di/dt 200A/s, VDD BVDSS, St... |
| Description |
N-Channel MOSFET 500V, 11.5A, 0.65Ω N-Channel MOSFET 500V, 11.5A, 0.65楼? N-Channel MOSFET 500V, 11.5A, 0.65ヘ
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| File Size |
302.34K /
9 Page |
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it Online |
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Price and Availability
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