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  3.8a Datasheet PDF File

For 3.8a Found Datasheets File :: 16426    Search Time::1.844ms    
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    CEF860LT-G

Comchip Technology
Part No. CEF860LT-G
OCR Text ... i m e t e r ) t o - 2 2 0 a c (3.20) 0.126 0.055(1.40) 0.047(1.20) 0.148(3.80) 0.187(4.70) 0.531(13.50) 0.583(14.80) 0.610(15.50) 0.583(14....8a v f 1.7 i f = 8a , t j = 125c v 1.5 v f 600 1.1 parameter conditions symbol min. typ ...
Description Efficient Fast Recovery Rectifiers, V<sub>RRM</sub>=600V, V<sub>R</sub>=600v, I<sub>O</sub>=8A

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    HuaXinAn Electronics CO.,LTD
HuaXinAn Electronics CO...
Part No. 018-220 012-220 048-250 005-220 003-250 N68F N68FA
OCR Text 3 slim type and small occupying area can offer high density p .c.b. technique. employment of suitable plastic materials to be applied to h...8a dash numbers coil voltage vdc coil resistance 10% operate time ms relea se tim e ms coil paramet...
Description Slim type and small occupying area can offer high density P.C.B. technique
Slim type and small occupying area can offer high density P.C.B. technique.

File Size 482.29K  /  1 Page

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    2N6536

Savantic, Inc.
Part No. 2N6536
OCR Text ...description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector...8a; i b =80ma 3.0 v v be-1 base -emitter on voltage i c =5a ; v ce =3v 2.8 v v be-2 base ...
Description Silicon NPN Power Transistors

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    Micross Components
Part No. ICE60N160B
OCR Text ...(th) gate threshold voltage 2.5 3 3.5 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.1 1 a v ds = 650v, v gs = 0v, t...8a, r g = 4? (external) t r rise time - 5 - t d(of ) turn-of delay time - 67 - t f fall time - 4.5...
Description N-Channel Enhancement Mode MOSFET

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    SUMITOMO
Part No. ELM5964-16F
OCR Text ...ds = 300 ma - 0.5 - 1.5 - 3.0 v gage - source breakdown voltage v gso i gs =85ua - 5.0 - - v output power at 1db g.c.p . p 1db v ds =10v i ds ( dc ) = 2.8a(typ.) f = 5.9 ~ 6.4 ghz 41.5 42.5 - dbm ...
Description C-Band Internally Matched FET

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    SUMITOMO
Part No. ELM5964-4PS
OCR Text ...v ds =5v, i ds =85ma -0.5 -1.5 -3.0 v output power at 1db g.c.p. p 1db 35.0 36.0 - dbm power gain at 1db g.c.p. g 1db 10.0 11.5 - db drain c...8a jul. 2010 2 c - band internally matched fet elm5964 - 4ps note ? this device will n...
Description C-Band Internally Matched FET

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    IPP65R095C7

Infineon Technologies AG
Part No. IPP65R095C7
OCR Text ...in 2, tab gate pin 1 source pin 3 3 650vcoolmos?c7powertransistor ipp65r095c7 rev.2.0,2013-10-11 final data sheet tableofcontents...8a, t j =25c v gs =10v, i d =11.8a, t j =150c gate resistance r g - 0.9 - w f =1mhz,opendrain t...
Description LED Driver IC and Lighting IC

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    D9N40

Alpha & Omega Semiconductors
Part No. D9N40
OCR Text ...etitive avalanche energy c 1 a 3.2 single pulsed avalanche energy h 300 mj v/ns 5 p d maximum case-to-sink a maximum junction-to-case d,f...8a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance ...
Description AOD9N40

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Part No. 241-8-20A54
OCR Text ...ass b size va l w h a b ml lbs. 3 2.4 2.06 1.06 1.19 1.62 0.56 1.75 0.25 4 6 2.38 1.25 1.38 1.69 0.69 2.0 0.44 5 12 2.81 1.38 1.63 1.94 0.81...8a 16v c.t. @ 2.0a 16v c.t. @ 3.5a 16v c.t. @ 6.25a 241-3-20a4 241-4-20a14 241-5-20a24 241-6-20a34 2...
Description SPLIT BOBBIN POWER TRANSFORMER, 100 VA

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