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  3-w ch Datasheet PDF File

For 3-w ch Found Datasheets File :: 27650    Search Time::3.719ms    
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    2SK1279

FUJI[Fuji Electric]
Part No. 2SK1279
OCR Text ...Tch=25C Min. 500 2,1 Typ. 3,0 10 10 0,4 13 2000 270 140 30 100 400 160 0,95 150 Max. 4,0 500 100 0,58 3000 400 210 45 150 600 240 1...W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-...
Description N-channel MOS-FET

File Size 198.95K  /  2 Page

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    2SK2002-01MR

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK2002-01MR
OCR Text ...GS PD T ch T stg Rating 600 600 3 12 30 30 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Ga...
Description N-channel MOS-FET

File Size 211.39K  /  2 Page

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    2SK2003-01MR

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2003-01MR
OCR Text ...Tch=25C Min. 600 2,5 Typ. 3,0 10 0,2 10 2 4 1000 85 20 20 15 45 15 Max. 3,5 500 1,0 100 2,4 1500 130 30 30 25 70 25 4 16 1,65 2 ...W C/W FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90...
Description N-channel MOS-FET

File Size 200.13K  /  2 Page

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    2SK2004-01L 2SK2004-01S

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2004-01L 2SK2004-01S
OCR Text ... N-channel MOS-FET 1000V 3,6 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General P...W C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified ...
Description N-channel MOS-FET

File Size 218.14K  /  2 Page

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    2SK2007

HITACHI[Hitachi Semiconductor]
Part No. 2SK2007
OCR Text ... Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2007 Absolute Maximum Ratings (Ta = 25C) Item Drain to so...W C C 2 2SK2007 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage...
Description Silicon N-channel MOS FET

File Size 47.39K  /  9 Page

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    2SK2008

HITACHI[Hitachi Semiconductor]
Part No. 2SK2008
OCR Text ... TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008 Absolute Maximum Ratings (Ta = 25C) Item Drain to source v...W C C 2 2SK2008 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage...
Description Silicon N channel MOS FET
Silicon N-channel MOS FET

File Size 32.77K  /  6 Page

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    2SK2383

PANASONIC[Panasonic Semiconductor]
Part No. 2SK2383
OCR Text ...wn unit: mm 15.50.5 4.5 3.20.1 10.0 3.00.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circ...W C C 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power diss...
Description Silicon N-channel Power F-MOS FET

File Size 42.68K  /  3 Page

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    2SK3022

Panasonic, Corp.
Panasonic Semiconductor
Part No. 2SK3022
OCR Text ...1 2 0.750.1 2.30.1 4.60.1 3 1: Gate 2: Drain 3: Source U Type Package Avalanche energy capacity Allowable power dissipation chan...W C C S G D L = 0.1mH, IL = 5A, 1 pulse s Electrical characteristics (TC = 25C) Parameter Dr...
Description Silicon N-channel Power F-MOS FET 5000 mA, 60 V, N-chANNEL, Si, SMALL SIGNAL, MOSFET

File Size 23.26K  /  1 Page

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    2SK3023

Panasonic Semiconductor
Part No. 2SK3023
OCR Text ...1 2 0.750.1 2.30.1 4.60.1 3 1: Gate 2: Drain 3: Source U Type Package Avalanche energy capacity Allowable power dissipation chan...W C C S G D L = 0.1mH, IL = 10A, 1 pulse s Electrical characteristics (TC = 25C) Parameter D...
Description Silicon N-channel Power F-MOS FET

File Size 23.25K  /  1 Page

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    2SK3024 2SK3024TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3024 2SK3024TENTATIVE
OCR Text ...1 2 0.750.1 2.30.1 4.60.1 3 1: Gate 2: Drain 3: Source U Type Package Avalanche energy capacity Allowable power dissipation chan...W C C S G D L = 0.1mH, IL = 20A, 1 pulse s Electrical characteristics (TC = 25C) Parameter D...
Description Silicon N-channel Power F-MOS FET

File Size 23.22K  /  1 Page

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