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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
HY27US08121A HY27US16121A HY27SS08121A HY27SS16121A HY27SS08121A-TCP HY27SS08121A-TPCP HY27SS08121A-FPCP HY27SS08121A-SMP HY27SS08121A-FCP HY27SS16121A-FCP HY27SS08121A-SPCP HY27SS16121A-FPCP HY27SS16121A-SMP HY27SS16121A-SCP HY27SS16121A-FEB HY27US08121A-FES
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| OCR Text |
...series is a 64Mx8bit with spare 2mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is d... |
| Description |
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
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| File Size |
421.19K /
49 Page |
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IDT
http://
Integrated Device Technology, Inc.
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| Part No. |
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72604S200BQ IDT71P72604S250BQ IDT71P72204S200BQ IDT71P72804S250BQ IDT71P72204S250BQ IDT71P72804S167BQ IDT71P72104S167BQ IDT71P72804S200BQ IDT71P72204S167BQ IDT71P72104S250BQ IDT71P72104S200BQ IDT71P72604S167BQG
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| OCR Text |
...x x x
x x x
18Mb Density (2mx8, 2Mx9, 1Mx18, 512kx36) Separate, Independent Read and Write Data Ports Supports concurrent transactions Dual Echo Clock Output 2-Word Burst on all SRAM accesses DDR (Double Data Rate) Multiplexed Address... |
| Description |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
592.35K /
22 Page |
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Samsung Electronics
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| Part No. |
K8D1716UBC K8D1716UTC
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| OCR Text |
...-type Flash Memory organized as 2mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and prog... |
| Description |
16M-Bit Dual Bank NOR Flash Memory
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| File Size |
628.07K /
41 Page |
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it Online |
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Price and Availability
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