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Motorola, Inc
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| Part No. |
MRF21030D MRF21030R3 MRF21030SR3
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| OCR Text |
... = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
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| File Size |
372.54K /
8 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
BLF7G20L-90P BLF7G20LS-90P BLF7G20L-90P-15
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| OCR Text |
... mhz, 1805 mhz to 1880 mhz and 2110 mhz to 2170 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (1427 mhz to1525 mhz, 1805 mhz t... |
| Description |
Power LDMOS transistor BLF7G20L-90P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G20L-90P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
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| File Size |
156.83K /
15 Page |
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it Online |
Download Datasheet |
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Price and Availability
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