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Guangdong Kexin Industrial ...
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| Part No. |
SI2301DS-HF-3
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| OCR Text |
... = - 4.5v ) r d s ( o n ) 190m ( v g s = - 2.5v ) a bs olut e max imum r at ings ta = 25 g s d 2 3 1 p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s - 20 g ate- s our c e ... |
| Description |
P-Channel MOSFET
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| File Size |
1,570.89K /
4 Page |
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Guangdong Kexin Industrial ...
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| Part No. |
SI2301DS
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| OCR Text |
... = - 4.5v ) r d s ( o n ) 190m ( v g s = - 2.5v ) a bs olut e max imum r at ings ta = 25 g s d 2 3 1 s i2 3 0 1 ds ( k i 2 3 01ds) p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol ... |
| Description |
P-Channel Enhancement MOSFET
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| File Size |
1,552.56K /
4 Page |
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it Online |
Download Datasheet |
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Guangdong Kexin Industrial ...
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| Part No. |
SI2301DS-HF
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| OCR Text |
... = - 4.5v ) r d s ( o n ) 190m ( v g s = - 2.5v ) a bs olut e max imum r at ings ta = 25 g s d 2 3 1 p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s - 20 g ate- s our c e ... |
| Description |
P-Channel MOSFET
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| File Size |
1,530.77K /
4 Page |
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it Online |
Download Datasheet |
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Guangdong Kexin Industrial ...
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| Part No. |
SI2304DS-HF KI2304DS-HF
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| OCR Text |
...s = 10v ) r d s ( o n ) 190m ( v g s = 4.5v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.... |
| Description |
N-Channel MOSFET
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| File Size |
1,351.97K /
4 Page |
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Kersemi Electronic Co.,...
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| Part No. |
IRFR120Z
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| OCR Text |
190m ? i d = 8.7a www.kersemi.com 1 automotive mosfet pd - 95772a specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per s... |
| Description |
AUTOMOTIVE MOSFET
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| File Size |
4,271.67K /
11 Page |
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it Online |
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Bruckewell Technology L...
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| Part No. |
MSP2301N3
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| OCR Text |
...= - 4.5v, ids= - 2.8a rds(on)=190m@vgs= - 2.5v, ids= - 2a ? advanced trench process technology ? high density cell design for ultra low on resistance ? excellent thermal and electrical capabilities ? compact and low prof... |
| Description |
20V P-CHANNEL Enhancement Mode MOSFET
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| File Size |
518.03K /
6 Page |
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it Online |
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Pan Jit International I...
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| Part No. |
PJA3411
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| OCR Text |
...(on) , v gs @-1.8v, i d @-1.1a<190m ? ? advanced trench process technology ? specially designed for switch lo ad, pwm application, etc. ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as ... |
| Description |
20V P-Channel Enhancement Mode MOSFET
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| File Size |
209.86K /
6 Page |
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it Online |
Download Datasheet |
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