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  16a d Datasheet PDF File

For 16a d Found Datasheets File :: 2933    Search Time::1.421ms    
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    FML16N60ES

Fuji Electric
Part No. FML16N60ES
OCR Text ...gate charge q g v cc =300v i d =16a v gs =10v - 56 114 nc gate-source charge q gs - 20 25.5 drain-source crossover charge q sw - 21 33 gate-drain charge q gd - 9.5 14.5 avalanche capability i av l=1.74mh, t ch =25c 16 - - a diode forward on...
Description N-CHANNEL SILICON POWER MOSFET

File Size 392.46K  /  5 Page

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    HFA08TB60

IRF[International Rectifier]
Part No. HFA08TB60
OCR Text ... 100A IF = 8.0A See Fig. 1 IF = 16a IF = 8.0A, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 0.8 x VR Ratedd Rated VR = 200V See Fig. 3...d = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P dM t1 t2 Notes: 1. duty factor...
Description 600V 8A HEXFREd discrete diode in a TO-220AC package
Ultrafast, Soft Recovery diode
Ultrafast/ Soft Recovery diode

File Size 182.97K  /  6 Page

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    IRFZ34 IRFZ34N

IRF[International Rectifier]
Part No. IRFZ34 IRFZ34N
OCR Text ...d = 1mA 0.040 VGS = 10V, I d = 16a 4.0 V VdS = VGS, Id = 250A --- S VdS = 25V, Id = 16a 25 VdS = 55V, VGS = 0V A 250 VdS = 44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 34 Id = 16a 6.8 nC VdS = 44V 14 VGS = 10V, See Fig. 6 and...
Description Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

File Size 195.05K  /  8 Page

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    FMI16N60E

Actel Corporation
Fuji Electric
Part No. FMI16N60E
OCR Text ...gate charge q g v cc =300v i d =16a v gs =10v - 76 114 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 22 33 avalanche capability i av l=1.74mh, t ch =25c 16 - - a diode forward on-voltage v sd i f =16a, v gs =0v, t c h =25c -...
Description FMI16N60E
N-CHANNEL SILICON POWER MOSFETFeatures

File Size 422.18K  /  5 Page

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    FMI16N60ES

Fuji Electric
Part No. FMI16N60ES
OCR Text ...gate charge q g v cc =300v i d =16a v gs =10v - 56 114 nc gate-source charge q gs - 20 25.5 gate-drain charge q gd - 21 33 gate-drain crossover charge q sw - 9.5 10 avalanche capability i av l=1.74mh, t ch =25c 16 - - a diode forward on-vol...
Description N-CHANNEL SILICON POWER MOSFET

File Size 470.65K  /  5 Page

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    IXYS
Part No. IXSP20N60B2d1
OCR Text ... 20 v 100 na v ce(sat) i c = 16a, v ge = 15 v 2.5 v preliminary data sheet v ces = 600 v i c25 = 35 a v ce(sat) = 2.5 v g = gate c = col...d(on) 30 ns t ri 30 ns t d(off) 116 ns t fi 126 ns e off 380 600 j t d(on) 30 ns t ri 30 ns e on 20...
Description High Speed IGBT

File Size 596.12K  /  6 Page

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    CC610816 CC610816A CD610816 CD610816A CN610816 CN610816A CS610816 CS610816A CD611616 CD611616A CS611616 CS611616A CD61 C

Powerex Power Semicondu...
Powerex, Inc.
Powerex Powers
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
Part No. CC610816 CC610816a Cd610816 Cd610816a CN610816 CN610816a CS610816 CS610816a Cd611616 Cd611616a CS611616 CS611616a Cd61 CC611216a CC611416 CC611616 CC611216 CC611416a CC611616a Cd611216 Cd611216a Cd611416 Cd611416a CN611216 CN611216a CN611416 CN611416a CN611616 CN611616a CS611216 CS611216a CS611416 CS611416a
OCR Text 16a, CS61__16a CN61__16a, CC61__16a Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272 POW-R-BLOK dual & Single ...d E F F description: Powerex dual diode & Single diode Modules are designed for use in applicati...
Description POW-R-BLOK dual & Single diode Isolated Module 160 Amperes / Up to 1600 Volts 260 A, 1400 V, SILICON, RECTIFIER dIOdE
POW-R-BLOK dual & Single diode Isolated Module 160 Amperes / Up to 1600 Volts 165 A, 1600 V, SILICON, RECTIFIER dIOdE
POW-R-BLOK dual & Single diode Isolated Module 160 Amperes / Up to 1600 Volts 165 A, 1200 V, SILICON, RECTIFIER dIOdE
POW-R-BLOK dual & Single diode Isolated Module 160 Amperes / Up to 1600 Volts

File Size 99.68K  /  5 Page

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    IRF7456

IRF[International Rectifier]
Part No. IRF7456
OCR Text ...V RdS(on) max 0.0065 Id 16a Benefits Ultra-Low RdS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses...d d d d 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol V...
Description Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16a)

File Size 162.74K  /  8 Page

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    FMH16N60ES

Fuji Electric
Part No. FMH16N60ES
OCR Text ...gate charge q g v cc =300v i d =16a v gs =10v - 56 114 nc gate-source charge q gs - 20 25.5 gate-drain charge q gd - 21 33 gate-drain crossover charge q sw - 9.5 10 avalanche capability i av l=1.74mh, t ch =25c 16 - - a diode forward on-vol...
Description N-CHANNEL SILICON POWER MOSFET

File Size 477.94K  /  5 Page

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