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  1600a Datasheet PDF File

For 1600a Found Datasheets File :: 223    Search Time::1.109ms    
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    ADPOW[Advanced Power Technology]
Part No. APTGT20H60T3
OCR Text ...= 0V IF = 20A VR = 300V di/dt =1600a/s 20 1.6 1.5 120 210 1.1 2.3 2 V ns C May, 2005 2-5 APTGT20H60T3 - Rev 0, APT website - http://www.advancedpower.com APTGT20H60T3 Temperature sensor NTC (see application note APT0406 on ww...
Description Full - Bridge Trench + Field Stop IGBT Power Module

File Size 281.92K  /  5 Page

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    APTGT20DSK60T3

Advanced Power Technology
Part No. APTGT20DSK60T3
OCR Text ...= 0V IF = 20A VR = 300V di/dt =1600a/s 20 1.6 1.5 120 210 1.1 2.3 2 V ns C APT website - http://www.advancedpower.com 2-5 APTGT20DSK60T3 - Rev 0, May, 2005 APTGT20DSK60T3 Temperature sensor NTC (see application note A...
Description Dual Buck chopper Trench Field Stop IGBT Power Module

File Size 281.45K  /  5 Page

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    1MBI800U4B-120

Fuji Electric
Part No. 1MBI800U4B-120
OCR Text ... 1600 8 6 800 4 Ic=1600a Ic=800A Ic=400A 400 2 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 5 10 15 20 Gate-Emitter voltage : VGE [ V ] 25 Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1M...
Description IGBT MODULE

File Size 418.66K  /  13 Page

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    A5N3200.10

AEGIS SEMICONDUTORES LTDA
Part No. A5N3200.10
OCR Text ...). TJ = 125OC, VD = VDRM, ITM = 1600a. Gate pulse: 20V, 20 W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately O 40% of non-repetitive value. tp < 5 ms tp < 5 ms Non lubricated threads di/dt Max. Non-repetitive rate-ofrise cu...
Description Phase Control Thyristors

File Size 474.28K  /  4 Page

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    APTGT20DDA60T3

Advanced Power Technology
Part No. APTGT20DDA60T3
OCR Text ...= 0V IF = 20A VR = 300V di/dt =1600a/s 20 1.6 1.5 120 210 1.1 2.3 2 V ns C APT website - http://www.advancedpower.com 2-5 APTGT20DDA60T3 - Rev 0, May, 2005 APTGT20DDA60T3 Temperature sensor NTC (see application note A...
Description Dual Boost chopper Trench Field Stop IGBT Power Module

File Size 280.72K  /  5 Page

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    GP214D

List of Unclassifed Manufacturers
ETC
Part No. GP214D
OCR Text ...1 Charge Pump Output Current 1600a 200A 400A 800A Version 1.2 (Jan. 2006) 5 GAINTECH INCORPORATED GP214D 1.4GHz DUAL PLL Test mode and lock detector output (T, LD1 and LD2) The LD state can be changed via controlling S...
Description 1.4GHz DUAL PLL

File Size 583.94K  /  15 Page

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    DD260N

eupec GmbH
Part No. DD260N
OCR Text ...perrverzogerungsladung iFM = 1600a 800A 400A 200A 100A 50A 1000 100 1 10 -di/dt [A/s] 100 Sperrverzogerungsladung / Recovered charge Qr = f(-di/dt) Grenzstrom Tvj = Tvjmax, vR 0,5 VRRM, vRM = 0,8 VRRM Parameter: Durchlast...
Description Rectifier Diode Module

File Size 237.63K  /  10 Page

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    A5N1400.20 A5N1400.22

AEGIS SEMICONDUTORES LTDA
Part No. A5N1400.20 A5N1400.22
OCR Text ... TJ = 125O C, VD = VDRM , ITM = 1600a. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Non lubricated threads 16 3.0 3 5 2500 W W A V N AEGIS SEMI...
Description Phase Control Thyristors

File Size 315.09K  /  4 Page

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    A5N300.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N300.20H
OCR Text ...). TJ = 125OC, VD = VDRM, ITM = 1600a. Gate pulse: 20V, 20 W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms - AEGIS SEMICONDUTORES LTDA. A5N:300.XXH CHARACTERISTICS PARAMETER VT...
Description Phase Control Thyristors

File Size 492.22K  /  4 Page

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    A5N600.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N600.20H
OCR Text ...). TJ = 125OC, VD = VDRM, ITM = 1600a. Gate pulse: 20V, 20 W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms - AEGIS SEMICONDUTORES LTDA. A5N:600.XXH CHARACTERISTICS PARAMETER VT...
Description Phase Control Thyristors

File Size 609.57K  /  4 Page

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For 1600a Found Datasheets File :: 223    Search Time::1.109ms    
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