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  160.001 Datasheet PDF File

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...805 D2Pak IRF3805S Max. 220 160 75 890 130 2.2 20 TO-262 IRF3805L Units A Absolute Maximum Ratings Parameter ID @ TC = 25C ID ...001 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 N...
Description AUTOMOTIVE MOSFET

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ... 80 V GS = 10V 100 120 140 160 180 TJ , Junction Temperature ( C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer C...001 0.01 0.01 0.00001 Notes: 1. Duty factor D = 2. Peak T 0.1 t1/ t 2 J = P DM x Z thJC ...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ... 80 V GS = 10V 100 120 140 160 180 TJ , Junction Temperature ( C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer C...001 0.00001 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJC P DM t1 t2 +T C...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ... VG S = -10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical...001 0.01 0.1 1 t2 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effecti...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... VG S = -10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T em perature (C ) Fig 3. Typic...001 0.01 0.1 1 0.01 0.00001 0.0001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... V G S = -1 0V 100 120 140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , J unc tion T em perature (C ) Fig 3. Typ...001 0.01 0.1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ... V G S = -10 V 100 120 140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , Junction T em perature (C ) Fig 3. Typic...001 0.01 0.1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...of die contact 640 --- VGS = 0V 160 --- pF VDS = 25V 88 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VS...001 0.01 0.1 1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 1...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... 40 60 80 100 120 140 160 180 Junction Temperature, Tj (C) Fig.7. Typical transfer characteristics. ID = f(VGS) Transconduc...001 0.01 0.1 Avalanche time, tAV (ms) 1 10 Fig.13. Typical reverse diode current. IF ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...0 -20 0 20 40 60 80 100 120 140 160 1 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J , Junction Temperature ( C ) VGS, Gate-to-Sour...001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedanc...
Description MOSFET / SCHOTTKY DIODE

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