| |
|
 |
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
FS70KMJ-06
|
| OCR Text |
...Dimensions in mm
2.8 0.2
15 0.3
f 3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
E
0.75 0.15
2.54 0.25
2.54 0.25
4.5 0.2
123
2.6 0.2
4V DRIVE VDSS ............................................. |
| Description |
HIGH-SPEED SWITCHING USE
|
| File Size |
42.40K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| Part No. |
FS70KMJ-06
|
| OCR Text |
...Dimensions in mm
2.8 0.2
15 0.3
f 3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
E
0.75 0.15
2.54 0.25
2.54 0.25
4.5 0.2
123
2.6 0.2
4V DRIVE VDSS ............................................. |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
| File Size |
47.48K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
|
| Part No. |
IRHNA57064
|
| OCR Text |
... 25 15 au 86.6 2068 106 35 35 27 20 14 0 10 20 30 40 50 60 70 0 -5 -10 -15 -20 vgs vds kr xe au
irhna57064 pre-irradiation 4 www.irf.com fig ... |
| Description |
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
|
| File Size |
105.19K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technology, Ltd.
|
| Part No. |
APT6015JFVR
|
| OCR Text |
...0 320 480 315 475 45 70 125 190 15 30 13 26 45 70 510 unit pf nc ns min typ max 35 140 1.3 15 t j = 25c 250 t j = 125c 500 t j = 25c 1...25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 7... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
| File Size |
57.89K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRL3102PBF
|
| OCR Text |
... Crss = Cgd Coss = Cds + Cgd
15
ID = 35a VDS = 16V
12
C, Capacitance (pF)
3000 2400 1800
Ciss
9
Coss
1200 600 0 1 1...25 C
10
1ms 10 10ms
1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 1
TC = 25 C TJ = 150 C Si... |
| Description |
HEXFET Power MOSFET
|
| File Size |
128.67K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FSJ9055R4 FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1 FSJ9055R3
|
| OCR Text |
...1 31 APPLIED VGS BIAS (V) 20 10 15 20 0 5 10 15 20 (NOTE 6) MAXIMUM VDS BIAS (V) -60 -60 -48 -36 -60 -48 -36 -24 -12
TEST Single Event Ef...25 FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6
1E-7 -10
-30
... |
| Description |
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
|
| File Size |
65.59K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
