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  128m-bit Datasheet PDF File

For 128m-bit Found Datasheets File :: 1080    Search Time::3.094ms    
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    Macronix 旺宏
Part No. MX23L12822 23L12822
OCR Text 128m-bit MASK ROM (16/32 BIT OUTPUT) FEATURES * Bit organization - 8M x 16 (byte mode) - 4M x 32 (double word mode) * Fast access time (for VCC=3.3V5%) - Random access: 100ns (max.) - Page access: 30ns (max.) * Fast access time (for VCC...
Description 128m-bit MASK ROM (16/32 BIT OUTPUT)
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File Size 42.70K  /  6 Page

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    Atmel Corp
Part No. SAM9708NBSP SAM9708
OCR Text ...ss (ROM/SRAM/DRAM/SDRAM), up to 128M words (256M bytes). DRAM/SDRAM addresses are time-multiplexed on these pins as follows: WA0 - WA8: DRA0...bit wide SRAM is used. The type of RAM (16-bit/8-bit) can be selected by program. PCM ROM/SRAM/DRAM/...
Description 128-voice Integrated Sound Synthesizer
From old datasheet system

File Size 177.24K  /  29 Page

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    Samsung
Part No. K9F2808U0C
OCR Text ... or 8Mx16bit, the K9F28XXU0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be perform ed i...
Description IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system

File Size 317.17K  /  32 Page

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    M383L3223ETS M383L6420ETS M383L2828ET1 M383L6423ETS M312L6420ETS M312L6423ETS M312L2828ET0 M312L3223ETS

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M383L3223ETS M383L6420ETS M383L2828ET1 M383L6423ETS M312L6420ETS M312L6423ETS M312L2828ET0 M312L3223ETS
OCR Text ...tion 32M x 72 64M x 72 64M x 72 128M x 72 32M x 72 64M x 72 64M x 72 128M x 72 DDR SDRAM Component Composition 32Mx8( K4H560838E) * 9E...bit(Data-in/data-out) Pin Name DM0 ~ DM8 VDD VDDQ VSS VREF VDDSPD SDA SCL SA0 ~ 2 NC Data - in mask ...
Description DDR SDRAM Registered Module

File Size 446.08K  /  23 Page

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    Fujitsu
Part No. MBM29BS12DH-12 E520910
OCR Text ...URST MODE FLASH MEMORY CMOS 128M (8M x 16) BIT MBM29BS/FS12DH 12 s DESCRIPTION The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a...
Description Flash Memory - Super Low Voltage Single 1.8V
From old datasheet system

File Size 368.71K  /  85 Page

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    PI3B16224NBSP PI3B16224 PI3B16224BE PI3B16224B

Pericom Semiconductor Corp.
PERICOM[Pericom Semiconductor Corporation]
Pericom Technology
Part No. PI3B16224NBSP PI3B16224 PI3B16224BE PI3B16224B
OCR Text ...chTM Application Circuit 72 128M DIMM 100 MHz Application Information Logic Inputs The logic control inpus can be driven up to +3.6V regardless of the supply voltage. For example, given a +3.3V supply, IN may be driven LOW to 0V an...
Description 3.3V, 12-Bit to 24-Bit DeMux/Mux NanoSwitch
From old datasheet system
PI3B16224

File Size 64.64K  /  3 Page

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    Samsung
Part No. K9F1G08U0M
OCR Text 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : 8mA --> 4mA 2. AC parameter is changed. tRP(min.) :...
Description IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system

File Size 475.80K  /  39 Page

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    MC-4R192CPE6C MC-4R192CPE6C-653 MC-4R192CPE6C-745 MC-4R192CPE6C-845

http://
NEC[NEC]
NEC Corp.
Part No. MC-4R192CPE6C MC-4R192CPE6C-653 MC-4R192CPE6C-745 MC-4R192CPE6C-845
OCR Text ...PE6C modules consists of twelve 128M Direct Rambus DRAM (Direct RDRAMTM) devices (PD488448). These are extremely high-speed CMOS DRAMs organ...bit bus containing control and address information for column accesses. LCTM I RSL Clock to master. ...
Description Direct Rambus DRAM RIMM Module 192M-BYTE 96M-WORD x 16-BIT

File Size 130.93K  /  16 Page

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    HM5212805FLTD-75 HM5212805FLTD-B60 HM5212805FTD-B60 HM5212165F HM5212165FLTD-75 HM5212165FLTD-A60 HM5212165FLTD-B60 HM52

HITACHI[Hitachi Semiconductor]
Part No. HM5212805FLTD-75 HM5212805FLTD-B60 HM5212805FTD-B60 HM5212165F HM5212165FLTD-75 HM5212165FLTD-A60 HM5212165FLTD-B60 HM5212165FTD-B60 HM5212165FTD-A60 HM5212165FTD-75 HM5212805FTD-A60 HM5212805FTD-75 HM5212805FLTD-A60
OCR Text 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit x 4-bank/4-Mword x 8-bit x 4-bank PC/133, PC/100 SDRAM ADE-203-1048A (Z) Rev. 1.0 Jan. 31, 2000 Description The Hitachi HM5212165F is a 128-Mbit SDRAM organized as 2097152-word...
Description 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM

File Size 864.84K  /  63 Page

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    UPD23C128000BL UPD23C128000BLGX UPD23C128000BLGX-XXX UPD23C128000BLGY-MJH UPD23C128000BLGY-MKH UPD23C128000BLGY-XXX-MJH

NEC
Part No. UPD23C128000BL UPD23C128000BLGX UPD23C128000BLGX-XXX UPD23C128000BLGY-MJH UPD23C128000BLGY-MKH UPD23C128000BLGY-XXX-MJH UPD23C128000BLGY-XXX-MKH
OCR Text 128m-bit MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) Description The PD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 16,777,216 words...
Description 128m-bit MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE)

File Size 247.25K  /  20 Page

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