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    APT5018BLL APT5018SLL

ADPOW[Advanced Power Technology]
Part No. APT5018BLL APT5018SLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.49K  /  2 Page

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    APT5020BLC APT5020SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5020BLC APT5020SLC
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (...
Description POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.78K  /  2 Page

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    APT5020BN APT5022BN

ADPOW[Advanced Power Technology]
Part No. APT5020BN APT5022BN
OCR Text ...: 0.063" from Case for 10 Sec. 1 Volts Watts W/C C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic /...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0...
Description POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 51.03K  /  4 Page

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    APT5020BVFR

ADPOW[Advanced Power Technology]
Part No. APT5020BVFR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5020BVFR UNIT Volts Amps 500 26 104 30 40 300 ...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.42K  /  4 Page

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    APT5020BVR

ADPOW[Advanced Power Technology]
Part No. APT5020BVR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5020BVR UNIT Volts Amps 500 26 104 30 40 300 2...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.88K  /  4 Page

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    APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ...80 2.24 -55 to 150 300 22 30 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

File Size 61.69K  /  4 Page

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BVR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5024BVR UNIT Volts Amps 500 22 88 30 40 280 2....212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.21K  /  4 Page

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    APT5025BN APT5030BN

ADPOW[Advanced Power Technology]
Part No. APT5025BN APT5030BN
OCR Text ...: 0.063" from Case for 10 Sec. 1 Volts Watts W/C C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic /...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0...
Description POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 51.13K  /  4 Page

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    APT5028BVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5028BVR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5028BVR UNIT Volts Amps 500 20 80 30 40 250 2 ...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 20A 0.280 Ohm

File Size 61.82K  /  4 Page

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