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  0.0162 Datasheet PDF File

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    2SK235006

Toshiba Semiconductor
Part No. 2SK235006
OCR Text ...t Enhancement mode : RDS (ON) = 0.26 (typ.) : |Yfs| = 8 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 200 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-ga...
Description Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications

File Size 725.82K  /  6 Page

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    2SK270006 2SK2700

Toshiba Semiconductor
Part No. 2SK270006 2SK2700
OCR Text ...A (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS...
Description Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications

File Size 697.96K  /  6 Page

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    2SK274506 2SK2745

Toshiba Semiconductor
Part No. 2SK274506 2SK2745
OCR Text ...Enhancement mode : RDS (ON) = 7.0 m (typ.) : |Yfs| = 50 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 50 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate...
Description Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

File Size 697.19K  /  6 Page

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    2SK274606 2SK2746

Toshiba Semiconductor
Part No. 2SK274606 2SK2746
OCR Text ... (ON) = 1.3 (typ.) : |Yfs| = 5.0 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 640 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k)...
Description Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications

File Size 719.57K  /  6 Page

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    2SK274906 2SK2749

Toshiba Semiconductor
Part No. 2SK274906 2SK2749
OCR Text ... (ON) = 1.6 (typ.) : |Yfs| = 5.0 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k)...
Description Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

File Size 705.66K  /  6 Page

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    2SK2879-0107 2SK2879-01

Fuji Electric
Part No. 2SK2879-0107 2SK2879-01
OCR Text ... Units V V A mA nA S pF 3.0 3.5 10 500 0.2 1.0 10 100 0.33 0.38 7.5 15.0 2200 3300 330 500 140 210 20 30 130 200 160 240 105 160 20 1.1 1.65 650 10.0 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c...
Description N-CHANNEL SILICON POWER MOSFET FAP-2S Series

File Size 72.85K  /  4 Page

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    2SK298906

Toshiba Semiconductor
Part No. 2SK298906
OCR Text ...0 V) Enhancement-mode : Vth = 1.0~2.2 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Channel t...
Description Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

File Size 252.62K  /  6 Page

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    2SK309006 2SK3090

Toshiba Semiconductor
Part No. 2SK309006 2SK3090
OCR Text ...max) (VDS = 30 V) : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID ...
Description Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications

File Size 203.87K  /  3 Page

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    2SK3093LS

Sanyo Semicon Device
Part No. 2SK3093LS
OCR Text ...onditions Ratings 400 30 3 12 2.0 20 150 --55 to +150 51.4 3 Unit V V A A W W C C mJ A *1 VDD=50V, L=10mH, IAV=3A *2 L10mH, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Volta...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 27.68K  /  3 Page

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    2SK3095LS

Sanyo Semicon Device
Part No. 2SK3095LS
OCR Text ...onditions Ratings 400 30 5 20 2.0 25 150 --55 to +150 71.4 5 Unit V V A A W W C C mJ A *1 VDD=50V, L=5mH, IAV=5A *2 L5mH, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 27.83K  /  3 Page

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