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0.0060 Datasheet PDF File

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				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	1891-03 SD1891-03 1893-03
OCR Text	...IABILITY AND RUGGEDNESS OUT = 5.0 W MIN. WITH 14.0 dB GAIN .230 2LFL (M151) hermetically sealed ORDER CODE SD1891-03 BRANDING 1891-03 PIN CONNECTION DESCRIPTION The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT a...
Description	ENHANCED PATCH CORD, PINK 7 FT. RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 1.6 GHz SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS
File Size	65.11K / 5 Page	View it Online	Download Datasheet

				MCC[Micro Commercial Components]
Part No.	1N18 1N17 1N19
OCR Text	0 Amp Schottky Barrier Rectifier 20 to 40 Volts High Current Capability Low Power loss High Efficiency Low Forward Voltage Drop Metal Silicon junction, majority carrier conduction Maximum Ratings * * * * Operating Temperature: -55C t...
Description	1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts
File Size	248.45K / 2 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
Part No.	TL082CD TL082ACP TL084CN TL081ACP TL081C TL081CD TL084ACN TL082C TL082AC TL084C TL084AC ON2991
OCR Text	...put Offset Voltage Options of 6.0 mV and 15 mV Max TL082C,AC TL084C,AC JFET INPUT OPERATIONAL AMPLIFIERS SEMICONDUCTOR TECHNICAL DATA * * * * * * Low Input Bias Current: 30 pA Low Input Offset Current: 5.0 pA Wide Gain Bandwidt...
Description	JFET INPUT OPERATIONAL AMPLIFIERS From old datasheet system
File Size	167.32K / 8 Page	View it Online	Download Datasheet

				SSDI[Solid States Devices Inc] Solid States Devices, Inc
Part No.	1N4148SM
OCR Text	...to End Tab 200 2 -65 TO +200 0.35 mAmps Amps o C o C/mW NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0061A ...
Description	200 mAMP 75 VOLTS 5 nsec HYPER FAST RECTIFIER
File Size	45.72K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	1N456AT50R 1N456ATR 1N456A
OCR Text	...d Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature Value 30 500 1.0 4.0 -65 to +200 175 Unit V mA A A C C TSTG TJ * These ratings are limiting values...
Description	High Conductance Low Leakage Diode
File Size	31.06K / 3 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	1N456A
OCR Text	...d Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature Value 30 500 1.0 4.0 -65 to +200 175 Unit V mA A A C C TSTG TJ * These ratings are limiting values...
Description	Small Signal Diode
File Size	23.65K / 2 Page	View it Online	Download Datasheet

				Knox Semiconductor Inc
Part No.	1N5296 1N5310 1N5314 1N5311 1N5295 1N5294 1N5309 1N5286
OCR Text	... Ip (mA) @ Vs = 25V NOM MIN MAX 0.22 0.24 0.27 0.30 0.33 0.39 0.43 0.47 0.56 0.62 0.68 0.75 0.82 0.91 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.80 2.00 2.20 2.40 2.70 3.00 3.30 3.60 3.90 4.30 4.70 0.198 0.216 0.243 0.270 0.297 0.351 0.387 0.423 ...
Description	CURRENT LIMITER FIELD EFFECT DIODES
File Size	43.66K / 2 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
Part No.	1N5296 1N5294 1N5309 1N5314 1N5283 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292 1N5293 1N5295 1N5297 1N5298 1N5299 1N5300 1N5301 1N5302 1N5303 1N5304 1N5305 1N5306 1N5307 1N5308 1N5310 1N5311 1N5312 1N5313 ON0007 1N5283THRU1N5314
OCR Text	...P (mA) @ VT = 25 V Type No. Nom 0.22 0.24 0.27 0.30 0.33 0.39 0.43 0.47 0.56 0.62 0.68 0.75 0.82 0.91 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.80 2.00 2.20 2.40 2.70 3.00 3.30 3.60 3.90 4.30 4.70 Min 0.198 0.216 0.243 0.270 0.297 0.351 0.387 0....
Description	CURRENT REGULATOR DIODES 电流调节二极 From old datasheet system
File Size	119.23K / 5 Page	View it Online	Download Datasheet

				PANJIT[Pan Jit International Inc.]
Part No.	1N5363B 1N5361B 1N5388B 1N5348 1N5348B 1N5349B 1N5350B 1N5352B 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N5362B 1N5364B 1N5365B 1N5366B 1N5367B 1N5368B 1N5369B 1N5370B 1N5371B 1N5372B 1N5373B 1N5374B 1N5375B 1N5376B 1N5377B 1N5378B 1N5379B 1N5380B 1N5381B 1N5382B 1N5383B 1N5384B 1N5385B 1N5386 1N5386B 1N5387B 1N5351B
OCR Text	...TAGE- 11 to 200 Volts Power - 5.0 Watts FEATURES * Built-in strain relief * Glass passivated junction * Low inductance * Typical IR less than 5.0A above 11V * Plastic package has Underwriters Laboratory Flammability Classification 94V-O *...
Description	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts)
File Size	298.69K / 4 Page	View it Online	Download Datasheet

				EIC discrete Semiconductors
Part No.	1N5913A 1N5953A 1N5939A 1N5932A 1N5916A
OCR Text	...ILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, ...
Description	SILICON ZENER DIODES
File Size	21.73K / 3 Page	View it Online	Download Datasheet

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