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ST Microelectronics
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| Part No. |
STB50NE08
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| OCR Text |
...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =25 a 20 35 s c iss c oss c rss input capacitance out... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
288.51K /
8 Page |
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it Online |
Download Datasheet
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STMicroelectronics N.V.
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| Part No. |
STP50NE10
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| OCR Text |
...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ... |
| Description |
N-Channel 100V-0.021Ω-50A-D2PAK STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道100V的，0.021Ω- 50A条，采用D2PAK STripFETTM功率MOSFET（不适用沟道功率MOSFET的）
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| File Size |
85.98K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB80NE06-10
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| OCR Text |
...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =40 a 19 38 s c iss c oss c rss input capacitance out... |
| Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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| File Size |
165.96K /
8 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
P4NB10 P4NB100
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| OCR Text |
...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 3.8 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forwar...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ... |
| Description |
Search --To STP4NB100
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| File Size |
139.43K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB80NF03L-04
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| OCR Text |
...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward...e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27... |
| Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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| File Size |
125.16K /
7 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP6NB25
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| OCR Text |
...ate drain current v ds >i d(on) xr ds(on)max, v gs =10v 6a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =3a 3s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 ... |
| Description |
N-CHANNEL MOSFET
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| File Size |
303.05K /
9 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STP6NB50
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| OCR Text |
...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 5.8 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =2.9a 2.5 4 s c iss c oss c rss input capacitance ou... |
| Description |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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| File Size |
307.37K /
9 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STP11NB40
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| OCR Text |
...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 10.7 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forwa...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ... |
| Description |
N-CHANNEL PowerMESH MOSFET
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| File Size |
134.74K /
9 Page |
View
it Online |
Download Datasheet |
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