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    CY7C1413AV18-200BZI CY7C1413AV18-200BZXC CY7C1413AV18-167BZC CY7C1413AV18-167BZI CY7C1413AV18-167BZXC CY7C1413AV18-167BZ

Cypress Semiconductor
Part No. CY7C1413AV18-200BZI CY7C1413AV18-200BZXC CY7C1413AV18-167BZC CY7C1413AV18-167BZI CY7C1413AV18-167BZXC CY7C1413AV18-167BZXI CY7C1413AV18-200BZC CY7C1413AV18-200BZXI CY7C1413AV18-250BZC CY7C1413AV18-250BZI CY7C1413AV18-250BZXC CY7C1413AV18-250BZXI CY7C1411AV18-167BZC CY7C1411AV18-167BZXC CY7C1411AV18-167BZI CY7C1415AV18-167BZXI CY7C1415AV18-167BZI CY7C1415AV18-167BZXC CY7C1415AV18-167BZC CY7C1411AV18-278BZC CY7C1415AV18-278BZC CY7C1426AV18-278BZC CY7C1413AV18-278BZC CY7C1411AV18-278BZXI CY7C1413AV18-278BZXI
OCR Text ...self-timed writes available in x8, x9, x18, and x36 configurations full data coherency, providing most current data core v dd = 1.8 (0.1...4m x 8 cy7c1426av18 ? 4m x 9 cy7c1413av18 ? 2m x 18 cy7c1415av18 ? 1m x 36 functional description th...
Description 36-Mbit QDR-II SRAM 4-Word Burst Architecture

File Size 453.56K  /  31 Page

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    K4S510832D K4S281632I K4S561632H M366S0924IUS K4S640832K07 M366S1723IUS M464S1724IUS M464S1724KUS K4S560832H K4S560432H

Samsung semiconductor
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Part No. K4S510832D K4S281632I K4S561632H M366S0924IUS K4S640832K07 M366S1723IUS M464S1724IUS M464S1724KUS K4S560832H K4S560432H K4S280832I K4S510432D M374S3323IUS M366S1654HUS M366S1654JUS M374S1723IUS K4S561632J K4S511632D K4S641632K K4S281632K M464S3254JUS M366S3323IUS M390S6450HUU M390S6450HU1 M390S3253HU1 M366S6453HUS M366S6453JUS K4S560432J M464S6453JV0 M464S6453HV0 KS641632K KS641632N M366S3253JUS K4S280432I K4S640832N
OCR Text ...x frame) x 8 Stack (Flex frame) x8 x16 x32 9. Package Type U : TSOP II (Lead-free)*1 T : TSOP II V : sTSOP II (Lead-free)*1 N : sTSOP II ...4m x 16 8M x 8 LVTTL 4m x 16 32M x 4 16M x 8 8M x 16 32M x 4 16M x 8 8M x 16 64m x 4 32M x 8 16M x 1...
Description SDRAM Product Guide

File Size 146.45K  /  8 Page

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    CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI CY7C1543V18-300BZXC CY7C1543V18-300BZXI CY7C1543V18-333BZC CY7C1543V18

Cypress Semiconductor
Part No. CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI CY7C1543V18-300BZXC CY7C1543V18-300BZXI CY7C1543V18-333BZC CY7C1543V18-333BZI CY7C1543V18-333BZXC CY7C1543V18-333BZXI CY7C1543V18-375BZC CY7C1543V18-375BZI CY7C1543V18-375BZXC CY7C1543V18-375BZXI CY7C1541V18-375BZC CY7C1556V18-375BZC CY7C1545V18-375BZC CY7C1545V18-333BZI CY7C1545V18-300BZC CY7C1545V18-300BZI CY7C1545V18-300BZXC CY7C1545V18-333BZC CY7C1545V18-300BZXI CY7C1541V18-300BZI CY7C1541V18-333BZI CY7C1541V18-333BZXI CY7C1541V18-333BZXC
OCR Text ... self-timed writes Available in x8, x9, x18, and x36 configurations Full data coherency providing most current data Core VDD = 1.8V 0.1V; I...4m x 18) 1 A B C D E F G H J K L M N P R CQ NC NC NC NC NC NC DOFF NC NC NC NC NC NC TDO 2 NC/144m Q...
Description 72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

File Size 983.61K  /  28 Page

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Part No. UPD45128163G5-A10L-9JF UPD45128163G5-A80-9JF
OCR Text ...organization 4 : x4 8 : x8 memory density 128 : 128m bits synchronous dram nec memory package g5 : tsop (ii) low voltage ...4m words 8 bits 4 banks a0 to a13 note : address inputs dq0 to dq7 : data inputs / outp...
Description 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54

File Size 688.32K  /  84 Page

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    CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1

Cypress Semiconductor, Corp.
Part No. CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1514KV18-250BZI CY7C1514KV18-250BZXC CY7C1514KV18-333BZC CY7C1514KV18-333BZI CY7C1514KV18-333BZXC CY7C1514KV18-333BZXI CY7C1514KV18-250BZXI CY7C1525KV18 CY7C1512KV18-350BZC
OCR Text ... is asserted low available in x8, x9, x18, and x36 configurations full data coherency, providing most current data core v dd = 1.8 v (...4m x 18 cy7c1514kv18 ? 2m x 36 functional description the cy7c1510kv18, cy7c1525kv18, cy7c1512kv18, ...
Description 72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4mb x 18; Vcc (V): 1.7 to 1.9 V 4m X 18 QDR SRAM, 0.45 ns, PBGA165

File Size 603.26K  /  33 Page

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    K5D5657ACM K5D5657ACM-F015

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K5D5657ACM K5D5657ACM-F015
OCR Text ...lash memory is organized as 32M x8 bits and 256Mbit SDRAM is organized as 4m x16 bits x4 banks. In 256Mbit NAND Flash, a 528-Byte page program can be typically achieved within 200us and an 16K-Byte block erase can be typically achieved with...
Description 256Mb NAND and 256Mb Mobile SDRAM

File Size 1,846.05K  /  74 Page

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    ELPIDA MEMORY INC
Part No. UPD45128441G5-A10L-9JF UPD45128163G5-A10L-9JF
OCR Text ...organization 4 : x4 8 : x8 memory density 128 : 128m bits synchronous dram nec memory package g5 : tsop (ii) low voltage ...4m words 8 bits 4 banks a0 to a13 note : address inputs dq0 to dq7 : data inputs / outp...
Description 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54

File Size 707.96K  /  88 Page

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    K4S560432J

Samsung semiconductor
Part No. K4S560432J
OCR Text ... 11.0 dc characteristics (x4, x8) ............. ................ ................. ................ ................. .............. .......4m x 16 bit x 4 banks sdram row & column address configuration organization row address column addr...
Description 256Mb J-die SDRAM Specification

File Size 320.51K  /  15 Page

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    CY7C1510KV18-200BZC CY7C1510KV18-200BZI CY7C1510KV18-200BZXC CY7C1510KV18-200BZXI CY7C1514KV18 CY7C1514KV18-167BZC CY7C1

Cypress Semiconductor
Part No. CY7C1510KV18-200BZC CY7C1510KV18-200BZI CY7C1510KV18-200BZXC CY7C1510KV18-200BZXI CY7C1514KV18 CY7C1514KV18-167BZC CY7C1514KV18-167BZI CY7C1514KV18-167BZXC CY7C1514KV18-167BZXI CY7C1514KV18-200BZC CY7C1514KV18-200BZI CY7C1514KV18-200BZXC CY7C1514KV18-200BZXI CY7C1514KV18-250BZC CY7C1514KV18-250BZI CY7C1514KV18-250BZXC CY7C1514KV18-250BZXI CY7C1510KV18-250BZXC CY7C1510KV18-250BZXI CY7C1525KV18-250BZC CY7C1525KV18-250BZI CY7C1525KV18-250BZXC CY7C1525KV18-250BZXI CY7C1525KV18-200BZXC CY7C1525KV18-200BZXI CY7C1525KV18-200BZC CY7C1525KV18-200BZI CY7C1525KV18-167BZXC CY7C1525KV18-167BZXI CY7C1525KV18-167BZC CY7C1525KV18-167BZI CY7C1525KV18 CY7C1512KV18-167BZXC CY7C1512KV18-167BZXI CY7C1512KV18-250BZXC CY7C1512KV18-250BZXI CY7C1514KV18-300BZC CY7C1514KV18-300BZI CY7C1514KV18-300BZXC CY7C1514KV18-300BZXI CY7C1514KV18-333BZC CY7C1514KV18-333BZI CY7C1514KV18-333BZXC CY7C1514KV18-333BZXI CY7C1510KV18-333BZXC CY7C1510KV18-333BZXI CY7C1510KV18-300BZXC CY7C1510KV18-300BZXI CY7C1512KV18-333BZXC CY7C1512KV18-333BZXI CY7C1512KV18-333BZC CY7C1512KV18-333BZI CY7C1512KV18-300BZXC CY7C1512KV18-300BZXI CY7C1512KV18-300BZC CY7C1512KV18-300BZI CY7C1510KV18-167BZC CY7C1512KV18-167BZC CY7C1510KV18-167BZI CY
OCR Text ...FF is asserted LOW Available in x8, x9, x18, and x36 Configurations Full Data Coherency, providing Most Current Data Core VDD = 1.8V (0.1V);...4m x 8 Array 4m x 8 Array K K CLK Gen. Control Logic RPS C C CQ DOFF Read Data Reg...
Description 72-Mbit QDR-II SRAM 2-Word Burst Architecture

File Size 557.29K  /  30 Page

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    Cypress Semiconductor, Corp.
Part No. CY7C1543V18-300BZI CY7C1545V18-375BZI
OCR Text ...self-timed writes available in x8, x9, x18, and x36 configurations full data coherency, providing most current data core v dd = 1.8v 0....4m x 18 cy7c1545v18 ? 2m x 36 functional description the cy7c1541v18, cy7c1556v18, cy7c1543v18, and ...
Description 72-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 4m X 18 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165

File Size 453.24K  /  28 Page

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