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				FAIRCHILD SEMICONDUCTOR CORP
Part No.	FFL60U60DNTU
OCR Text	...n and storage temperature - 65 to +150 c symbol parameter value units r jc maximum thermal resistance, junction to case 0.45 c/w symbol ...264 1 2 3 1. anode 2.cat hode 3. anode ?2000 fairchild semiconductor internation...
Description	60 A, 600 V, SILICON, RECTIFIER DIODE, to-264AA
File Size	81.93K / 5 Page	View it Online	Download Datasheet

				ZILOG[Zilog, Inc.]
Part No.	Z87200
OCR Text	...des Allows High Processing Gain to Maximize the Acquisition Probability, then Reduced Code Length for Increased Data Rate Reduced Power Cons...264 Mchips/second. When operating with BPSK modulation, the maximum data rate for a PN code of lengt...
Description	Spread-Spectrum Transceiver
File Size	443.88K / 54 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
Part No.	APT56M50L APT56M50B209
OCR Text	to-264 n-channel mosfet absolute maximum ratings thermal and mechanical characteristics g d s single die mosfet unit a v mj a unit w c/w c oz g inlbf nm ratings 56 35 175 30 1200 28 min typ max 780 0.16 ...
Description	56 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, to-264AA N-Channel MOSFET
File Size	113.46K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LL APT5010LLL
OCR Text	...e Voltage B2LL T-MAXTM to-264 LLL * Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or to-264 Package D G S All Ratings: TC = 25C unless otherwise specified. APT5010 UNIT Volts Amps Continuous Drain ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text	...wer Miller Capacitance * Easier To Drive * Lower Gate Charge, Qg * Popular T-MAXTM or to-264 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage T-MAXT...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	54.02K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...izing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exc...264 Package * Lower Gate Charge & Capacitance * Easier To Drive * 100% Avalanche Tested * Faster swi...
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVFR APT20M22LVFR
OCR Text	to-264 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves fast...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	66.12K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVR
OCR Text	...hrough optimized gate layout.. to-264 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular to-264 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source V...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	64.27K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	...izing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exc...264 Package * Lower Gate Charge & Capacitance * Easier To Drive * 100% Avalanche Tested * Faster swi...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

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