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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
BSP16T1
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| OCR Text |
...0 -350 -6.0 -1000 -500 1.5 - 65 to +150 150 Unit Vdc Vdc Vdc mAdc mAdc Watts C C
1 2 3
CASE 318E-04, STYLE 1 to-261aa
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA ... |
| Description |
SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
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| File Size |
109.07K /
6 Page |
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it Online |
Download Datasheet
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
BSP62T1
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| OCR Text |
...ating the possibility of damage to the die * Available in 12 mm Tape and Reel Use BSP62T1 to order the 7 inch/1000 unit reel. Use BSP62T3 to...261AA
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collect... |
| Description |
MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
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| File Size |
178.97K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLL2703
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| OCR Text |
... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...261AA) Outline
Part Marking Information
SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14 W A FE... |
| Description |
HEXFET Power MOSFET
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| File Size |
123.80K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRSF3021
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| OCR Text |
...t-Limit Protection Active Drain-to-Source Clamp ESD Protection Compatible with Standard Power MOSFET Low Operating Input Current Monolithic ...261AA
LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain
To Order
Previous Datasheet
I... |
| Description |
FULLY PROTECTED POWER MOSFET SWITCH(Vds(50V), Rds(on)=200mohm)
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| File Size |
262.54K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MMFT5P03HDT3 MMFT5P03HD MMFT5P03HD-D
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| OCR Text |
...commutation modes and the drain-to-source diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage...261AA CASE 318E STYLE 3
5P03H LWW
L WW
= Location Code = Work Week
PIN ASSIGNMENT
4 Dra... |
| Description |
30V N-Channel PowerTrench MOSFET 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, to-261aa
Power MOSFET 5 Amps, 30 Volts P-Channel SOT-223
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| File Size |
112.51K /
12 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MMFT960T1
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| OCR Text |
...ating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Sourc...261AA CASE 318E STYLE 3
FT960 LWW
L WW
= Location Code = Work Week
1. Device mounted on ... |
| Description |
Power MOSFET 300 mA, 60 Volts
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| File Size |
78.46K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
PZTA42T1 PZTA42T1_D
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| OCR Text |
... Value 300 300 6.0 500 1.5 - 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts C C
1 2 3
4
CASE 318E-04, STYLE 1 to-261aa
DEVICE MARKING
P1D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient(1) Symbol RJ... |
| Description |
SOT23 PACKAGE NPN SILICON
NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
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| File Size |
105.31K /
6 Page |
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it Online |
Download Datasheet |
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ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
PZTA64T1 PZTA64T1_D ON2784
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| OCR Text |
...ons or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium pow...261AA
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collect... |
| Description |
From old datasheet system
SOT23 PACKAGE NPN SILICON
PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
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| File Size |
169.93K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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