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  t1-e1 Datasheet PDF File

For t1-e1 Found Datasheets File :: 4625    Search Time::1.047ms    
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    NP110N055PUK-E1-AY NP110N055PUK-E2-AY

Renesas Electronics Corporation
Part No. NP110N055PUK-E1-AY NP110N055PUK-E2-AY
OCR Text ...wer dissipation (t c = 25c) p t1 348 w total power dissipation (t a = 25c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 66 a repetitive avalan...
Description MOS FIELD EFFECT TRANSISTOR
   MOS FIELD EFFECT TRANSISTOR

File Size 105.41K  /  8 Page

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    OMRON Scientific Technologies, Inc.
Part No. NP70N10KUF-E1-AZ
OCR Text ... dissipation (t a = 25 c) p t1 1.8 w total power dissipation (t c = 25 c) p t2 120 w channel temperature t ch 175 c storage...e1, -e2) of tapi ng depending on the direction of the device. reel side draw-out side marki...
Description 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, TO-263, MP-25ZK, 3 PIN

File Size 195.86K  /  9 Page

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    Renesas Electronics Corporation
Part No. UPA2721GR-E1 PA2721GR-15
OCR Text ...al power dissipation note2 p t1 1.1 w total power dissipation (pw = 10 sec) note2 p t2 2.5 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mount...
Description 19 A, 30 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET
   SWITCHING N-CHANNEL POWER MOSFET

File Size 269.99K  /  8 Page

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    NP16N04YUG-E1-AY NP16N04YUG-E2-AY NP16N04YUG-15

Renesas Electronics Corporation
Part No. NP16N04YUG-E1-AY NP16N04YUG-E2-AY NP16N04YUG-15
OCR Text ...er dissipation (t c = 25 c) p t1 36 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 13 a repetiti...
Description MOS FIELD EFFECT TRANSISTOR

File Size 213.51K  /  8 Page

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    NP180N055TUJ-E1-AY NP180N055TUJ-E2-AY NP180N055TUJ-15

Renesas Electronics Corporation
Part No. NP180N055TUJ-E1-AY NP180N055TUJ-E2-AY NP180N055TUJ-15
OCR Text ...er dissipation (t c = 25 c) p t1 348 w total power dissipation (t a = 25 c) ? 2 p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 66 a repetit...
Description MOS FIELD EFFECT TRANSISTOR

File Size 206.84K  /  8 Page

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    NP23N06YDG-E1-AY NP23N06YDG-E2-AY

Renesas Electronics Corporation
Part No. NP23N06YDG-E1-AY NP23N06YDG-E2-AY
OCR Text ...er dissipation (t c = 25 c) p t1 60 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 11 a repetiti...
Description MOS FIELD EFFECT TRANSISTOR

File Size 215.07K  /  8 Page

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    NP180N055TUK-E1-AY

Renesas Electronics Corporation
Part No. NP180N055TUK-E1-AY
OCR Text ...wer dissipation (t c = 25c) p t1 348 w total power dissipation (t a = 25c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 66 a repetitive avalan...
Description MOS FIELD EFFECT TRANSISTOR

File Size 106.79K  /  8 Page

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    NP74N04YUG-E1-AY NP74N04YUG-E2-AY

Renesas Electronics Corporation
Part No. NP74N04YUG-E1-AY NP74N04YUG-E2-AY
OCR Text ...er dissipation (t c = 25 c) p t1 120 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 32 a repetit...
Description MOS FIELD EFFECT TRANSISTOR

File Size 218.52K  /  8 Page

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    NP82N10PUF-E1-AY NP82N10PUF-E2-AY

Renesas Electronics Corporation
Part No. NP82N10PUF-E1-AY NP82N10PUF-E2-AY
OCR Text ...er dissipation (t c = 25 c) p t1 150 w total power dissipation (t a = 25 c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg -55 to +175 c single avalanche current ? 2 i as 34 a single avalanche en...
Description MOS FIELD EFFECT TRANSISTOR

File Size 238.76K  /  9 Page

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    NP89N04PUK-E1-AY NP89N04PUK-E2-AY NP89N04PUK-15

Renesas Electronics Corporation
Part No. NP89N04PUK-E1-AY NP89N04PUK-E2-AY NP89N04PUK-15
OCR Text ...wer dissipation (t c = 25c) p t1 147 w total power dissipation (t a = 25c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 37 a repetitive avalan...
Description MOS FIELD EFFECT TRANSISTOR

File Size 108.09K  /  8 Page

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For t1-e1 Found Datasheets File :: 4625    Search Time::1.047ms    
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