rg-188 pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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rg-188 Datasheet PDF File

For rg-188 Found Datasheets File :: 524 Search Time::1.265ms
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				New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
Part No.	STW8NA80 STH8NA80FI
OCR Text	...st conditions vdd = 400 v id=4a rg = 4.7u vgs = 10v vdd = 640 v id = 8 a rg= 47 ij vgs = 10 v vdd = 400 v id = 8 a vcs=10v min. typ. 20 28 170 75 10 35 max. 28 38 100 unit ns ns a/us nc nc nc switching off symbol tr(voff) tf tc parameter of...
Description	N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
File Size	130.14K / 3 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STS7C4F30L
OCR Text	...N-CHANNEL ID = 3.5 A VDD = 15 V RG = 4.7 VGS = 4.5 V P-CHANNEL VDD = 15 V ID = 2 A RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) N-CHANN...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description	7 A, 30 V, 0.026 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET⑩ POWER MOSFET P-CHANEL 30V - 0.027 OHM - 6A SO-8 STRIPFET II POWER MOSFET N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET POWER MOSFET
File Size	402.56K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ34L IRFZ34S
OCR Text	... VDD = 30V --- I D = 30A ns --- RG = 12 --- RD = 1.0, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET Power MOSFET
File Size	277.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PC40FD IRG4PC40 IRG4PC40FDPBF
OCR Text	... 27A, VCC = 480V 350 VGE = 15V, RG = 10 250 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 4.0 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 27A, VCC = 480V ---VGE = 15V, RG = 10 ---Energy losses ...
Description	600V Fast 1-8 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
File Size	212.91K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4PC40KD IRG4PC40KDPBF
OCR Text	..., VCC = 480V 100 150 VGE = 15V, RG = 10 0.95 -- Energy losses include "tail" 0.76 -- mJ See Fig. 9,10,14 1.71 2.3 -- -- s VCC = 360V, TJ = 1...188 -- A/s TJ = 25C See Fig. 160 -- TJ = 125C 17 2 www.irf.com IRG4PC40KD 30 For both: ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.1V的电压，@和VGE \u003d 15V的，集成电路\u003d 25A条） 600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
File Size	181.03K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ48S IRFZ48L
OCR Text	... VDD = 30V --- I D = 72A ns --- RG = 9.1 --- RD = 0.34, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET Power MOSFET
File Size	294.77K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ34S IRFZ34STRL IRFZ34STRR
OCR Text	... VDD = 30V --- I D = 30A ns --- RG = 12 --- RD = 1.0, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package HEXFET? Power MOSFET
File Size	298.35K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGB15N60T
OCR Text	... 0.5, VCE = 400V, VGE = 0/+15V, RG = 15) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V) 30A 120W 100W 80W 60W 40W 20W 0W 25C IC, COLLECTOR CURRENT POWER DISSIPATION 20A 10...
Description	Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
File Size	361.51K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKB15N60T
OCR Text	... 0.5, VCE = 400V, VGE = 0/+15V, RG = 15) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V) 30A 120W 100W 80W 60W 40W 20W 0W 25C IC, COLLECTOR CURRENT POWER DISSIPATION 20A 10...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	394.61K / 13 Page	View it Online	Download Datasheet

For rg-188 Found Datasheets File :: 524 Search Time::1.265ms
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