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M2039TNG CA3138 MAX3222 12001 LTT67S 211423 K573AB 50074
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    K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R1008V1B-I8 K6R1008V1B-B-P K6R1008V1B-C-L K6R1008V1B-C12 K6R1008V1B-I-P K6

Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R1008V1B-I8 K6R1008V1B-B-P K6R1008V1B-C-L K6R1008V1B-C12 K6R1008V1B-I-P K6R1008V1B-I10 K6R1008V1B-I12 K6R1008V1B K6R1008V1B-TP10
OCR Text ....4. Change D.C characteristics. previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) ICC 160/150/140mA 160/155/150mA ISB 30mA 50mA Change Standby and Data Retention Current for L-ver. Items previous spec. Changed spec. ISB1 ...
Description 128K X 8 STANDARD SRAM, 10 ns, PDSO32
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作),革命销出。在商用和工业温度范围运

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    74ACTQ16373 74ACTQ16373MEA 74ACTQ16373MTD 74ACTQ16373CW

FAIRCHILD[Fairchild Semiconductor]
Part No. 74ACTQ16373 74ACTQ16373MEA 74ACTQ16373MTD 74ACTQ16373CW
OCR Text ...I7 X L H X Outputs O0-O7 Z L H (previous) Outputs O8-O15 Z L H (previous) H = HIGH Voltage Level L = LOW Voltage Level X = Immaterial Z = High Impedance previous = previous output prior to HIGH-to-LOW transition of LE Logic Diagrams ...
Description    16-Bit Transparent Latch with 3-STATE Outputs

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    IRFY240CM

IRF[International Rectifier]
Seme LAB
Part No. IRFY240CM
OCR Text previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1289B HEXFET(R) POWER MOSFET IRFY240CM N-CHANNEL 200 Volt, 0.18 HEXFET HEXFET technology is the key to International Rectifier's advanced line of pow...
Description POWER MOSFET N-CHANNEL(BVdss=200V Rds(on)=0.18ohm Id=16A)
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)

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    IRF[International Rectifier]
Part No. IRFY9130CM
OCR Text previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1293A HEXFET(R) POWER MOSFET IRFY9130CM P-CHANNEL -100 Volt, 0.3 HEXFET International Rectifier's HEXFET technology is the key to its advanced line o...
Description POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A)
POWER MOSFET P-CHANNEL(BVdss=-100V Rds(on)=0.3ohm Id=-11.2A)

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    IRF[International Rectifier]
Part No. IRFY9140CM
OCR Text previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1294A HEXFET(R) POWER MOSFET IRFY9140CM P-CHANNEL -100 Volt, 0.2 HEXFET International Rectifier's HEXFET technology is the key to its advanced line o...
Description POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)
POWER MOSFET P-CHANNEL(BVdss=-100V Rds(on)=0.2ohm Id=-15.8A)

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    http://
IRF[International Rectifier]
Part No. IRGPH50FD2
OCR Text previous Datasheet Index Next Data Sheet PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diod...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=25A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A)

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    KM641001A KM641001A-20 KM641001A-15

http://
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM641001A KM641001A-20 KM641001A-15
OCR Text ...ers. 3.1. Update D.C parameters previous spec. Items (15/17/20ns part) Icc 190/180/170mA Isb 30mA Isb1 10mA 3.2. Update A.C parameters previous spec. Items (15/17/20ns part) tCW 12/12/13ns tAW 12/12/13ns tWP1(OE=H) 12/12/13ns tDW 8/9/10ns D...
Description 256KX 4 HIGH SPEED STATIC RAM(5V OPERATING), EVOLUTIONARY PIN OUT OPERATED AT COMMERCIAL TEMPERATURE RANGE

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    ST7282 ST7282B5 ST7282A5

STMICROELECTRONICS[STMicroelectronics]
Part No. ST7282 ST7282B5 ST7282A5
OCR Text ...5 7282A5B5 March 26, 1997 previous Ref Page 1/23 Edition Target C ST7282A5 - ST7282B5 - ROM FROM EPROM 1 GENERAL DESCRIPTION Figure 1. Block Diagram S 1 6 /P D 7 S 1 5 /P D 6 S 1 4 /P D 5 S 1 3 /P D 4 S 1 2 /P D 3 S 1 1 /...
Description ROM FROM EPROM

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    ST2600C

IRF[International Rectifier]
Part No. ST2600C
OCR Text previous Datasheet Index Next Data Sheet Bulletin I25199/A ST2600C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 2630A Typical ...
Description    PHASE CONTROL THYRISTORS Hockey Puk Version
PowerPak; Charge, gate n-channel:50nC; Current, Idm pulse:50A; Depth, external:5.26mm; RoHS Compliant: Yes

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