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ACS1026T 16F63 1GS4R 3P100 NTE2943 IRLR014N D74LV1G TDA7057
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For operations Found Datasheets File :: 39926    Search Time::1.609ms    
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    ATMEL CORP
Part No. AT25DQ321A-53H-B
OCR Text ... or malicious program and erase operations. by providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array secu...
Description FLASH 2.7V PROM, PDSO16

File Size 2,507.33K  /  61 Page

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    ALLIANCE SEMICONDUCTOR CORP
Part No. AS7C33256NTD18A-183TQC
OCR Text ...om access or read -modify-write operations. ntd ? devices use the memory bus more efficiently by introducing a wr ite 'latency' which matches the two (one)cycle pipeline (flowth rough) read latency. write data is applied two cycles after t...
Description 256K X 18 ZBT SRAM, 9 ns, PQFP100

File Size 235.40K  /  10 Page

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    BU21079F-E2

Rohm
Part No. BU21079F-E2
OCR Text ... results detected during switch operations (touch/release/hold) are stored in a register. an interrupt is sent from int port to the host when a register is updated during operations. if external noise and temperature drift are detected, au...
Description Capacitive Switch Controller ICs

File Size 910.41K  /  37 Page

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    ALLIANCE SEMICONDUCTOR CORP
INTEGRATED SILICON SOLUTION INC
Part No. AS7C33256NTD18A-100TQI AS7C33256NTD18A-133TQI AS7C33256NTD16A-133TQC AS7C33256NTD16A-100TQC
OCR Text ...m access or r ead-modify- write operations. ntd devices use the memory bus more efficiently by introducing a write latency that matches the two-cycle pipelined or one-cycl e flow- through read latency. write data is applied two cycles afte...
Description 256K X 18 ZBT SRAM, 12 ns, PQFP100
256K X 18 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 12 ns, PQFP100

File Size 162.82K  /  10 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU28822LT-K
OCR Text ...u28822 offers fully synchronous operations referenced to both rising and falling edges of the clock. while all addresses and control inputs are latched on the rising edges of the clock(falling edges of the clk ), data(dq), data strobes(dqs...
Description 16M X 8 DDR DRAM, PDSO66

File Size 84.91K  /  10 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1522KV18-250BZI CY7C1529KV18-300BZXI CY7C1529KV18-167BZXC
OCR Text ...as data outputs to support read operations and the write port has data inputs to support write operations. the ddr ii sio has separate data inputs and data outputs to completely eliminate the need to ?turnar ound? the data bus required with...
Description 8M X 8 DDR SRAM, 0.45 ns, PBGA165
8M X 9 DDR SRAM, 0.45 ns, PBGA165
8M X 9 DDR SRAM, 0.5 ns, PBGA165

File Size 591.02K  /  32 Page

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